July 2008 FDW262P 20V P-Channel PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET is produced 4.5 A, 20 V. RDS(ON) = 47 m @ VGS = 4.5 V using Fairchild Semiconductors advancedRDS(ON) = 65 m @ VGS = 2.5 V PowerTrench process that has been especially tailored RDS(ON) = 100 m @ VGS = 1.8 V to

November 2003 FDW264P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged 9.7 A, 20 V. RDS(ON) = 10.0 m @ VGS = 4.5 V gate version of Fairchild Semiconductors advanced RDS(ON) = 14.5 m @ VGS = 2.5 V PowerTrench process. It has been optimized for power management applications wit

FDW2601NZwww.VBsemi.twDual N-Channel 3 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)Pb-free TrenchFET Power MOSFETs0.012 at VGS = 10 V Available8.630RoHS*0.019 at VGS = 4.5 V 7.5COMPLIANTDDTSSOP-8 D D 1 8 S S 1 2 7 2 S S G1 G21 3 6 2 G 1 4 G 2 5 S1 S2Top View ABSOLUTE MAXIMUM RAT