SI1070X
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SI1070X
Маркировка: U*
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 0.236
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 1.55
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 1.2
A
Tjⓘ - Максимальная температура канала: 150
°C
trⓘ -
Время нарастания: 22
ns
Cossⓘ - Выходная емкость: 55
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.099
Ohm
Тип корпуса:
SC-89
Аналог (замена) для SI1070X
SI1070X
Datasheet (PDF)
..1. Size:120K vishay
si1070x.pdf 
Si1070XVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.099 at VGS = 4.5 V 1.2a TrenchFET Power MOSFET30 3.50.140 at VGS = 2.5 V 1.0 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch for Portable De
9.1. Size:163K vishay
si1077x.pdf 
Si1077XVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) Typical ESD Performance 2500 V0.078 at VGS = - 4.5 V - 1.4 100 % Rg Tested Material categorization:0.098 at VGS = - 2.5 V - 1- 20 12.1 nCFor definitions of compliance please see 0.130 at VGS = - 1.8 V - 1www.vi
9.2. Size:122K vishay
si1072x.pdf 
Si1072XVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.093 at VGS = 10 V 1.3a TrenchFET Power MOSFET30 5.410.129 at VGS = 4.5 V 1.2 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch for Portable De
9.3. Size:203K vishay
si1079x.pdf 
Si1079Xwww.vishay.comVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) Qg (TYP.) Typical ESD performance 2500 V0.100 at VGS = -4.5 V -1.44 100 % Rg tested-30 0.112 at VGS = -3.7 V -1.36 8.1 nC Material categorization: 0.140 at VGS = -2.5 V -1.22For definitions of compliance please s
9.4. Size:216K vishay
si1078x.pdf 
Si1078Xwww.vishay.comVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) Qg (TYP.) 100 % Rg tested0.142 at VGS = 10 V 1.02 Typical ESD performance 1400 V30 0.154 at VGS = 4 V 0.98 1.5 Material categorization:0.195 at VGS = 2.5 V 0.87for definitions of compliance please see www.v
9.5. Size:121K vishay
si1073x.pdf 
Si1073XVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.173 at VGS = - 10 V - 0.98a TrenchFET Power MOSFET- 30 3.250.243 at VGS = - 4.5 V - 0.83 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load SwitchSC-8
9.6. Size:121K vishay
si1071x.pdf 
Si1071XVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.960.167 at VGS = - 10 V TrenchFET Power MOSFET- 30 0.90 3.250.188 at VGS = - 4.5 V 100 % Rg Tested0.244 at VGS = - 2.5 V 0.79 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS
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