SI1070X - аналоги, параметры транзистора - Справочник транзисторов

SI1070X даташит

..1. Size:120K vishay
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Si1070X Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.099 at VGS = 4.5 V 1.2a TrenchFET Power MOSFET 30 3.5 0.140 at VGS = 2.5 V 1.0 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch for Portable De

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Si1077X Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) Typical ESD Performance 2500 V 0.078 at VGS = - 4.5 V - 1.4 100 % Rg Tested Material categorization 0.098 at VGS = - 2.5 V - 1 - 20 12.1 nC For definitions of compliance please see 0.130 at VGS = - 1.8 V - 1 www.vi

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Si1072X Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.093 at VGS = 10 V 1.3a TrenchFET Power MOSFET 30 5.41 0.129 at VGS = 4.5 V 1.2 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch for Portable De

9.3. Size:203K vishay
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Si1079X www.vishay.com Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) Qg (TYP.) Typical ESD performance 2500 V 0.100 at VGS = -4.5 V -1.44 100 % Rg tested -30 0.112 at VGS = -3.7 V -1.36 8.1 nC Material categorization 0.140 at VGS = -2.5 V -1.22 For definitions of compliance please s