SI1427EDH - Даташиты. Аналоги. Основные параметры

New ProductSi1427EDHVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.064 at VGS = - 4.5 V - 2.0e TrenchFET Power MOSFET0.085 at VGS = - 2.5 V - 2.0e 100 % Rg Tested- 20 7.6 nC0.110 at VGS = - 1.8 V - 2.0e Typical ESD Performance 2000 V

New ProductSi1422DHVishay SiliconixN-Channel 12 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.026 at VGS = 4.5 V 4 TrenchFET Power MOSFET 100 % Rg Tested12 0.030 at VGS = 2.5 V 4 7.5 nC Compliant to RoHS Directive 2002/95/EC0.036 at VGS = 1.8 V 4APPLICATIONS Loa

New ProductSi1428EDHVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.045 at VGS = 10 V 4 TrenchFET Power MOSFET30 0.049 at VGS = 4.5 V 4 4 nC Typical ESD Protection 2000 V HBM0.060 at VGS = 2.5 V 4 100 % Rg Tested Compliant to RoHS Dire

New ProductSi1424EDHVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.033 at VGS = 4.5 V 4 TrenchFET Power MOSFET0.038 at VGS = 2.5 V 4 Typical ESD Protection 4000 V20 6 nC0.045 at VGS = 1.8 V 4 100 % Rg Tested Compliant to RoHS Direct

Si1426DHVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.075 at VGS = 10 V 3.6 TrenchFET Power MOSFET300.115 at VGS = 4.5 V 2.9 Thermally Enhanced SC-70 Package PWM Optimized Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Boost Conve