SI4190DY - параметры транзистора MOSFET, его аналоги, datasheet

SI4190DY Datasheet (PDF)

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New ProductSi4190DYVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0088 at VGS = 10 V 20 TrenchFET Power MOSFET 100 18.3 nC0.012 at VGS = 4.5 V 17 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC Prim

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New ProductSi4190ADYVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) () Max. ID (A)a Qg (Typ.) 100 % Rg and UIS Tested0.0088 at VGS = 10 V 18.4 Material categorization:For definitions of compliance please see100 0.0094 at VGS = 7.5 V 17.8 20.7 nCwww.vishay.com/doc?999120.0120 at VGS = 4.5 V 1

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New ProductSi4196DYVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) 100 % Rg Tested0.027 at VGS = 4.5 V 8 100 % UIS Tested0.032 at VGS = 2.5 V 20 8 8.3 nC Compliant to RoHS Directive 2002/95/EC0.040 at VGS = 1.8 V 8APPLICATIONS DC/DC Converter Load

Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .