SI4666DY - параметры транзистора MOSFET, его аналоги, datasheet

SI4666DY Datasheet (PDF)

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Si4666DYVishay SiliconixN-Channel 25 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.010 at VGS = 10 V 16.5 TrenchFET Power MOSFET0.011 at VGS = 4.5 V 25 15.8 10.7 nC 100 % Rg and UIS Tested0.014 at VGS = 2.5 V 14 Compliant to RoHS Directive 2002/95/ECAPPLICATION

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Si4668DYVishay SiliconixN-Channel 25-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.0105 at VGS = 10 V 16.2 TrenchFET Power MOSFET25 12.4 nC 100 % Rg and UIS Tested0.0125 at VGS = 4.5 V 13APPLICATIONS Synchronous BuckSO-8 - High SideDSD1 8 SD2 7 SD3

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Si4662DYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.010 at VGS = 10 V 18.6 TrenchFET Power MOSFET11 nC30 100 % Rg and UIS Tested0.014 at VGS = 4.5 V 15.7APPLICATIONS High-Side Switch- Notebook DC/DC- Server DC/DCSO-8 DSD1

9.3. Size:238K vishay
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Si4660DYVishay SiliconixN-Channel 25-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.0058 at VGS = 10 V 23.1 TrenchFET Power MOSFET 17 nC25 100 % Rg and UIS Tested0.007at VGS = 4.5 V 21APPLICATIONS DC/DC Conversion- High Side - Low Side SO-8 DSD1 8 SD

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .