SI4688DY - параметры транзистора MOSFET, его аналоги, datasheet

SI4688DY Datasheet (PDF)

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New ProductSi4688DYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.011 at VGS = 10 V 12 TrenchFET Power MOSFET300.0145 at VGS = 4.5 V 9.8 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook PC- Core D- System PowerSO-8S D1 8S

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Si4684DYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0094 at VGS = 10 V Extremely Low Qgd WFET Technology1630 14 nCfor Low Switching Losses0.0115 at VGS = 4.5 V 14 TrenchFET Power MOSFET 100 % Rg Tested Compliant to RoHS Direc

9.2. Size:246K vishay
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Si4682DYVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0094 at VGS = 10 V 1630 11 nC Extremely Low Qgd for Low Switching Losses0.0135 at VGS = 4.5 V 13 TrenchFET Power MOSFET 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLI

9.3. Size:235K vishay
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Si4686DYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.0095 at VGS = 10 V 18.2 Extremely Low Qgd WFET Technology30 9.2 nC0.014 at VGS = 4.5 V 15for Low Switching Losses TrenchFET Power MOSFETs 100 % Rg TestedSO-8APPLICATIONSD

Другие MOSFET... SI4654DY , SI4660DY , SI4666DY , SI4668DY , SI4670DY , SI4682DY , SI4684DY , SI4686DY , 10N60 , SI4712DY , SI4752DY , SI4774DY , SI4776DY , SI4778DY , SI4800 , SI4800BDY , SI4810BDY .