SI5449DC - Даташиты. Аналоги. Основные параметры

Si5449DCVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Available0.085 at VGS = - 4.5 V - 4.3 TrenchFET Power MOSFETs: 2.5 V Rated- 300.135 at VGS = - 2.5 V - 3.41206-8 ChipFETS1 D D D D D GMarking CodeD G BH XX Lot Traceability S and Date Code

Si5443DCVishay SiliconixP-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.065 at VGS = - 4.5 V 4.9 TrenchFET Power MOSFETs: 2.5 V Rated0.074 at VGS = - 3.6 V - 20 4.60.110 at VGS = - 2.5 V 3.81206 -8 ChipFET S1 D D D D D GMarking CodeD G BB XX Lot

Si5445BDCVishay SiliconixP-Channel 1.8-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Available0.033 at VGS = - 4.5 V - 7.1 TrenchFET Power MOSFET0.043 at VGS = - 2.5 V - 6.2 14- 80.060 at VGS = - 1.8 V - 5.31206-8 ChipFET1DSD DD DMarking CodeD GGBM XXSLot Traceability

Si5441DCVishay SiliconixP-Channel 2.5 V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.055 at VGS = - 4.5 V - 5.3 TrenchFET Power MOSFET0.06 at VGS = - 3.6 V - 5.1 11 2.5 V Rated- 20 Compliant to RoHS Directive 2002/95/EC0.083 at VGS = - 2.5 V - 4.31206-8 ChipFET1

Si5441BDCVishay SiliconixP-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Available0.045 at VGS = - 4.5 V - 6.1 TrenchFET Power MOSFET0.052 at VGS = - 3.6 V - 5.7 11.5- 200.080 at VGS = - 2.5 V - 4.61206-8 ChipFET1DSD DD DMarking CodeD GGBK XXSLot Traceabil

New ProductSi5440DCVishay Siliconix N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.019 at VGS = 10 V 630 9 nCAPPLICATIONS0.024 at VGS = 4.5 V 6 Load Switches- Notebook PC1206-8 ChipFET1DDD DD DD GGSSBottom ViewN-Channel

Si5445DCVishay SiliconixP-Channel 1.8-V (G-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) () ID (A)0.035 @ VGS = --4.5 V7.1--8 0.047 @ VGS = --2.5 V 6.20.062 @ VGS = --1.8 V 5.7S1206-8 ChipFETt1DGD DD DMarking CodeD GBC XXSLot Traceabilityand Date CodePart # CodeDBottom ViewP-Channel MOSFETOrdering Information: Si5445DC-T1ABSOLUTE MAXIM

Si5442DUVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)a Qg (Typ.) Thermally Enhanced PowerPAKChipFET Package0.0100 at VGS = 4.5 V 25- Small Footprint Area- Low On-Resistance0.0115 at VGS = 2.5 V 2520 16.6 nC- Thin 0.8 mm Profile0.0135 at VGS = 1.8 V 25 100% Rg Tested

Si5447DCVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Available0.076 at VGS = - 4.5 V - 4.8 TrenchFET Power MOSFETs: 1.8 V Rated0.110 at VGS = - 2.5 V - 20 - 4.00.160 at VGS = - 1.8 V - 3.31206-8 ChipFETS1DD DD DGMarking CodeD GBG XXSLot Traceab