SI5513CDC - параметры транзистора MOSFET, его аналоги, datasheet

SI5513CDC Datasheet (PDF)

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Si5513CDCVishay SiliconixN- and P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A)a Qg (Typ.)Definition0.055 at VGS = 4.5 V TrenchFET Power MOSFETs4gN-Channel 20 2.6 nC 100 % Rg Tested0.085 at VGS = 2.5 V 4g Compliant to RoHS Directive 2002/95/EC0.150 at VGS = - 4.5 V - 3.7P-Ch

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SMD Type MOSFETComplementary Enhancement MOSFET SI5513CD (KI5513CD) Features N-ChannelVDS=20V ID=4A(VGS=4.5V)RDS(ON) 35m (VGS = 4.5V)RDS(ON) 50m (VGS = 2.5V)RDS(ON) 90m (VGS = 1.8V) P-ChannelVDS=-20V ID=-2.5A(VGS=-4.5V)RDS(ON) 85m (VGS =-4.5V)RDS(ON) 115m (VGS =-2.5V)RDS(ON) 150m (VGS =-1.8V) Absolute Maximum Rating

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Si5513DCVishay SiliconixComplementary 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.075 at VGS = 4.5 V 4.2 TrenchFET Power MOSFETsN-Channel 20 40.134 at VGS = 2.5 V 3.1 Compliant to RoHS Directive 2002/95/EC0.155 at VGS = - 4.5 V - 2.9P-Channel - 20 30.260 at VGS

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