SI5944DU - Даташиты. Аналоги. Основные параметры

Si5944DU Vishay Siliconix Dual N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) Qg (Typ.) ID (A) TrenchFET Power MOSFET 0.112 at VGS = 10 V 6a New Thermally Enhanced PowerPAK RoHS 40 2.2 nC 0.171 at VGS = 4.5 V ChipFET Package 4.9 COMPLIANT - Small Footprint Area PowerPAK ChipFET Dual - Low On-Resistance - Thin 0.8

Si5948DU www.vishay.com Vishay Siliconix Dual N-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) Qg (TYP.) 100 % Rg and UIS tested 0.082 at VGS = 10 V 6 a 40 2.2 nC New thermally enhanced PowerPAK 0.094 at VGS = 4.5 V 6 a ChipFET package - Small footprint area - Low on-resistance - Thin 0.8

Si5947DU Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Qg (Typ.) ID (A) Definition 0.058 at VGS = - 4.5 V - 6a TrenchFET Power MOSFET - 20 5.5 nC 0.100 at VGS = - 2.5 V New Thermally Enhanced PowerPAK - 6a ChipFET Package - Small Footprint Area PowerPAK ChipFET Dual

Si5943DU Vishay Siliconix Dual P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.064 at VGS = - 4.5 V - 6a New Thermally Enhanced PowerPAK RoHS 0.089 at VGS = - 2.5 V ChipFET Package - 12 COMPLIANT - 6a 6 nC - Small Footprint Area 0.120 at VGS = - 1.8 V - 6a - Low On-Resist