SI7117DN - Даташиты. Аналоги. Основные параметры

Si7117DN Vishay Siliconix P-Channel 150 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition TrenchFET Power MOSFETs 1.2 at VGS = - 10 V - 2.17 - 150 7.7 nC PowerPAK Package 1.3 at VGS = - 6 V - 2.1 - Low Thermal Resistance - Low 1.07 mm Profile Compliant to RoHS Directive 2002/

New Product Si7114ADN Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a, g Qg (Typ.) TrenchFET Power MOSFET RoHS 100 % Rg Tested 0.0075 at VGS = 10 V 35 COMPLIANT 30 10.2 nC 100 % UIS Tested 0.0098 at VGS = 4.5 V 35 APPLICATIONS PowerPAK 1212-8 Synchronous Rectification S 3.30

Si7115DN Vishay Siliconix P-Channel 150 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition TrenchFET Power MOSFET 0.295 at VGS = - 10 V - 8.9e Low Thermal Resistance PowerPAK - 150 23.2 nC 0.315 at VGS = - 6 V - 8.6e Package with Small Size and Low 1 mm Profile 100 % Rg and UI

Si7113DN Vishay Siliconix P-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( )ID (A) Qg (Typ.) TrenchFET Power MOSFET 0.134 at VGS = - 10 V - 13.2e Low Thermal Resistance PowerPAK RoHS - 100 16.5 nC Package with Small Size and Low 1.07 mm COMPLIANT 0.145 at VGS = - 4.5V - 12.7e Profile UIS and Rg Tested

Si7112DN Vishay Siliconix N-Channel 30 V (D-S) Fast Switching MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Definition ID (A) TrenchFET Power MOSFET 0.0075 at VGS = 10 V 17.8 30 New Low Thermal Resistance PowerPAK 0.0082 at VGS = 4.5 V 17.0 Package with Low 1.07 mm Profile 100 % Rg Tested Complia

Si7113ADN www.vishay.com Vishay Siliconix P-Channel 100 V (D-S) MOSFET FEATURES PowerPAK 1212-8 Single D TrenchFET power MOSFET D 8 D 7 100 % Rg and UIS tested D 6 5 Material categorization for definitions of compliance please see www.vishay.com/doc?99912 1 1 APPLICATIONS S 2 S S 3 S Active clamp in intermediate DC/DC 4 S 1 power supplies G

Si7116DN Vishay Siliconix N-Channel 40-V (D-S) Fast Switching MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( )ID (A) Qg (Typ.) TrenchFET Power MOSFET 0.0078 at VGS = 10 V RoHS 16.4 40 15 nC COMPLIANT New Low Thermal Resistance PowerPAK 0.010 at VGS = 4.5 V 14.5 Package with Low 1.07 mm Profile PWM Optimized 100 %

Si7114DN Vishay Siliconix N-Channel 30-V (D-S) Fast Switching MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( )ID (A) Qg (Typ.) TrenchFET Gen II Power MOSFET 0.0075 at VGS = 10 V RoHS 18.3 30 12.5 COMPLIANT New Low Thermal Resistance PowerPAK 0.010 at VGS = 4.5 V 15.9 Package with Low 1.07 mm Profile 100 % Rg Tested A

Si7119DN Vishay Siliconix P-Channel 200-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Available 1.05 at VGS = - 10 V - 3.8e TrenchFET Power MOSFET - 200 10.6 nC Low Thermal Resistance PowerPAK 1.10 at VGS = - 6.0V - 3.6e Package with Small Size and Low 1.07 mm Profile 100 % UIS and

New Product Si7114ADN Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a, g Qg (Typ.) TrenchFET Power MOSFET RoHS 100 % Rg Tested 0.0075 at VGS = 10 V 35 COMPLIANT 30 10.2 nC 100 % UIS Tested 0.0098 at VGS = 4.5 V 35 APPLICATIONS PowerPAK 1212-8 Synchronous Rectification S 3.30

SMD Type MOSFET P-Channel MOSFET SI7119DN (KI7119DN) Features VDS (V) =-200V ID =-3.8 A (VGS =-10V) RDS(ON) 1.05 (VGS =-10V) RDS(ON) 1.1 (VGS =-6V) S G PowerPAK 1212-8 (QFN5X6) S 3.30 mm 3.30 mm 1 S 2 S 3 G D 4 D 8 D 7 D 6 D 5 Bottom View Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Dra