SI7190DP - аналоги, параметры транзистора - Справочник транзисторов

SI7190DP технические параметры

..1. Size:478K vishay
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New Product Si7190DP Vishay Siliconix N-Channel 250-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)g Qg (Typ.) Definition 0.118 at VGS = 10 V 18.4 TrenchFET Power MOSFET 250 32 0.124 at VGS = 6 V 18.0 Low Thermal Resistance PowerPAK Package 100 % Rg Tested PowerPAK SO-8 100 % UIS Tes

9.1. Size:480K vishay
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New Product Si7194DP Vishay Siliconix N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a, g Qg (Typ.) TrenchFET Power MOSFETs RoHS 0.002 at VGS = 10 V 60 COMPLIANT 100 % Rg Tested 25 42 nC 0.0025 at VGS = 4.5 V 60 100 % Avalanche Tested PowerPAK SO-8 APPLICATIONS Low-Side in CPU and GPU core DC/DC

9.2. Size:506K vishay
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New Product Si7192DP Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Gen III Power MOSFET RoHS 0.0019 at VGS = 10 V 60 COMPLIANT 30 43.5 nC 100 % Rg Tested 0.00225 at VGS = 4.5 V 60 100 % Avalanche Tested APPLICATIONS PowerPAK SO-8 VRM, POL, Server High

9.3. Size:477K vishay
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Si7196DP Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.011 at VGS = 10 V 16g Extremely Low Qgd WFET Technology 30 13.2 nC 0.0145 at VGS = 4.5 V 16g for Switching Losses 100 % Rg Tested PowerPAK SO-8 100 % Avalanche Tested APPLICATIONS

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