SI7440DP MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SI7440DP
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 1.9 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 12 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 29 nC
trⓘ - Время нарастания: 16 ns
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0065 Ohm
Тип корпуса: POWERPAK-SO-8
SI7440DP Datasheet (PDF)
si7440dp.pdf
Si7440DPVishay SiliconixN-Channel 30-V (D-S) Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Available0.0065 at VGS = 10 V 21 TrenchFET Power MOSFET30 New Low Thermal Resistance PowerPAK0.008 at VGS = 4.5 V 19 Package with Low 1.07 mm Profile 100 % Rg Tested APPLICATIONSPowerPAK SO-
si7448dp 2.pdf
Si7448DPVishay SiliconixN-Channel 20-V (D-S) Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Available0.0065 at VGS = 4.5 V 22 TrenchFET Power MOSFET20 New Low Thermal Resistance PowerPAK0.009 at VGS = 2.5 V 19 Package with Low 1.07 mm Profile 100 % Rg Tested APPLICATIONSPowerPAK S
si7444dp.pdf
Si7444DPVishay SiliconixN-Channel 40-V (D-S) Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Available0.0061 at VGS = 10 V 40 23.6 105 TrenchFET Power MOSFET New Low Thermal Resistance PowerPAKPackage with Low 1.07 mm Profile 100 % Rg Tested High Threshold Voltage at Hi
si7445dp.pdf
Si7445DPVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Available0.0077 at VGS = - 4.5 V - 19 TrenchFET Power MOSFET New Low Thermal Resistance PowerPAK0.0094 at VGS = - 2.5 V - 17 - 20Package with Low 1.07 mm Profile0.0125 at VGS = - 1.8 V - 15 100 % Rg Tested
si7447ad.pdf
Si7447ADPVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.0065 at VGS = - 10 V - 35 100 nC- 30 TrenchFET Power MOSFETPowerPAK SO-8 New Low Thermal Resistance PowerPAKPackage with Low 1.07 mm Profile 100 % Rg TestedS6.15 mm 5.15 mm1S
si7448dp.pdf
Si7448DPVishay SiliconixN-Channel 20-V (D-S) Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Available0.0065 at VGS = 4.5 V 22 TrenchFET Power MOSFET20 New Low Thermal Resistance PowerPAK0.009 at VGS = 2.5 V 19 Package with Low 1.07 mm Profile 100 % Rg Tested APPLICATIONSPowerPAK S
si7447adp.pdf
Si7447ADPVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.0065 at VGS = - 10 V - 35 100 nC- 30 TrenchFET Power MOSFETPowerPAK SO-8 New Low Thermal Resistance PowerPAKPackage with Low 1.07 mm Profile 100 % Rg TestedS6.15 mm 5.15 mm1S
si7446dp.pdf
Si7446DPVishay SiliconixN-Channel 30-V (D-S) Fast Switching MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETD High-Efficiency PWM OptimizedVDS (V) rDS(on) (W) ID (A)D 100% Rg Tested0.0075 @ VGS = 10 V 1930300.010 @ VGS = 4.5 V 17D D D DPowerPAKr SO-8S6.15 mm 5.15 mm1S2S3GG4D8DN-Channel MOSFET7D6D5Bottom ViewS S SOrder
si7446bdp.pdf
Si7446BDPVishay SiliconixN-Channel 30-V (D-S) Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition 0.0075 at VGS = 10 V 19 TrenchFET Power MOSFET300.010 at VGS = 4.5 V 17 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECPowerPAK SO-8DS6.15 mm 5.15 mm1S2S3 GG
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