SI7440DP
MOSFET. Datasheet pdf. Equivalent
Type Designator: SI7440DP
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.9
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 12
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 29
nC
trⓘ - Rise Time: 16
nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065
Ohm
Package:
POWERPAK-SO-8
SI7440DP
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI7440DP
Datasheet (PDF)
..1. Size:460K vishay
si7440dp.pdf 
Si7440DPVishay SiliconixN-Channel 30-V (D-S) Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Available0.0065 at VGS = 10 V 21 TrenchFET Power MOSFET30 New Low Thermal Resistance PowerPAK0.008 at VGS = 4.5 V 19 Package with Low 1.07 mm Profile 100 % Rg Tested APPLICATIONSPowerPAK SO-
9.1. Size:457K vishay
si7448dp 2.pdf
Si7448DPVishay SiliconixN-Channel 20-V (D-S) Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Available0.0065 at VGS = 4.5 V 22 TrenchFET Power MOSFET20 New Low Thermal Resistance PowerPAK0.009 at VGS = 2.5 V 19 Package with Low 1.07 mm Profile 100 % Rg Tested APPLICATIONSPowerPAK S
9.2. Size:84K vishay
si7444dp.pdf
Si7444DPVishay SiliconixN-Channel 40-V (D-S) Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Available0.0061 at VGS = 10 V 40 23.6 105 TrenchFET Power MOSFET New Low Thermal Resistance PowerPAKPackage with Low 1.07 mm Profile 100 % Rg Tested High Threshold Voltage at Hi
9.3. Size:460K vishay
si7445dp.pdf
Si7445DPVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Available0.0077 at VGS = - 4.5 V - 19 TrenchFET Power MOSFET New Low Thermal Resistance PowerPAK0.0094 at VGS = - 2.5 V - 17 - 20Package with Low 1.07 mm Profile0.0125 at VGS = - 1.8 V - 15 100 % Rg Tested
9.4. Size:466K vishay
si7447ad.pdf
Si7447ADPVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.0065 at VGS = - 10 V - 35 100 nC- 30 TrenchFET Power MOSFETPowerPAK SO-8 New Low Thermal Resistance PowerPAKPackage with Low 1.07 mm Profile 100 % Rg TestedS6.15 mm 5.15 mm1S
9.5. Size:461K vishay
si7448dp.pdf
Si7448DPVishay SiliconixN-Channel 20-V (D-S) Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Available0.0065 at VGS = 4.5 V 22 TrenchFET Power MOSFET20 New Low Thermal Resistance PowerPAK0.009 at VGS = 2.5 V 19 Package with Low 1.07 mm Profile 100 % Rg Tested APPLICATIONSPowerPAK S
9.6. Size:469K vishay
si7447adp.pdf
Si7447ADPVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.0065 at VGS = - 10 V - 35 100 nC- 30 TrenchFET Power MOSFETPowerPAK SO-8 New Low Thermal Resistance PowerPAKPackage with Low 1.07 mm Profile 100 % Rg TestedS6.15 mm 5.15 mm1S
9.7. Size:50K vishay
si7446dp.pdf
Si7446DPVishay SiliconixN-Channel 30-V (D-S) Fast Switching MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETD High-Efficiency PWM OptimizedVDS (V) rDS(on) (W) ID (A)D 100% Rg Tested0.0075 @ VGS = 10 V 1930300.010 @ VGS = 4.5 V 17D D D DPowerPAKr SO-8S6.15 mm 5.15 mm1S2S3GG4D8DN-Channel MOSFET7D6D5Bottom ViewS S SOrder
9.8. Size:484K vishay
si7446bdp.pdf
Si7446BDPVishay SiliconixN-Channel 30-V (D-S) Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition 0.0075 at VGS = 10 V 19 TrenchFET Power MOSFET300.010 at VGS = 4.5 V 17 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECPowerPAK SO-8DS6.15 mm 5.15 mm1S2S3 GG
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