Справочник MOSFET. SI7611DN

 

SI7611DN MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SI7611DN
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 3.7 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 9.3 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 150 ns
   Cossⓘ - Выходная емкость: 215 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.025 Ohm
   Тип корпуса: POWERPAK-1212-8

 Аналог (замена) для SI7611DN

 

 

SI7611DN Datasheet (PDF)

 ..1. Size:565K  vishay
 si7611dn.pdf

SI7611DN SI7611DN

New ProductSi7611DNVishay SiliconixP-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFET0.025 at VGS = - 10 V - 18e Low Thermal Resistance PowerPAKRoHS- 40 41 nCPackage with Small Size and Low 1.07 mm COMPLIANT0.033 at VGS = - 4.5V - 18eProfile 100 % Rg and UIS TestedAPPLI

 9.1. Size:122K  vishay
 si7619dn.pdf

SI7611DN SI7611DN

New ProductSi7619DNVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.) Definition TrenchFET Power MOSFET0.021 at VGS = - 10 V - 24e- 30 15 nC 100 % Rg Tested0.034 at VGS = - 4.5 V - 18.7 100 % UIS TestedPowerPAK 1212-8 Compliant to RoHS Directiv

 9.2. Size:639K  vishay
 si7615cdn.pdf

SI7611DN SI7611DN

Si7615CDNwww.vishay.comVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPowerPAK 1212-8 SingleD TrenchFET Gen III p-channel power MOSFETD8D7 RDS(on) rating at VGS = -1.8 VD65 100 % Rg and UIS tested Material categorization: for definitions of compliance please see www.vishay.com/doc?99912112SS3SAPPLICATIONSS4S1G

 9.3. Size:122K  vishay
 si7615dn.pdf

SI7611DN SI7611DN

New ProductSi7615DNVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.0039 at VGS = - 10 V - 35a TrenchFET Gen III P-Channel Power MOSFET0.0055 at VGS = - 4.5 V - 20 100 % Rg Tested- 35a 62 nC 100 % UIS Tested0.0098 at VGS = - 2.5 V - 35a

 9.4. Size:566K  vishay
 si7613dn.pdf

SI7611DN SI7611DN

New ProductSi7613DNVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e,f Qg (Typ.)Definition0.0087 at VGS = - 10 V - 35 TrenchFET Power MOSFET- 20 28.1 nC Low Thermal Resistance PowerPAK0.014 at VGS = - 4.5V - 35Package with Small Size and Low 1.07 mm Profile

 9.5. Size:576K  vishay
 si7617dn.pdf

SI7611DN SI7611DN

New ProductSi7617DNVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () ID (A)d, g Qg (Typ.)Definition0.0123 at VGS = - 10 V - 35 TrenchFET Power MOSFET- 30 20.5 nC0.0222 at VGS = - 4.5 V - 35 100% Rg Tested 100% UIS TestedPowerPAK 1212-8 Compliant to RoHS Directi

 9.6. Size:548K  vishay
 si7615adn.pdf

SI7611DN SI7611DN

New ProductSi7615ADNVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Gen III P-Channel Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.0044 at VGS = - 10 V - 35a Material categorization:0.0060 at VGS = - 4.5 V - 20- 35a 59 nCFor definitions of compliance please see0.0098 at VGS = - 2.5 V

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