SI7611DN PDF and Equivalents Search

 

SI7611DN PDF Specs and Replacement


   Type Designator: SI7611DN
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 3.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 150 nS
   Cossⓘ - Output Capacitance: 215 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: POWERPAK-1212-8
 

 SI7611DN substitution

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SI7611DN PDF Specs

 ..1. Size:565K  vishay
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SI7611DN

New Product Si7611DN Vishay Siliconix P-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( )ID (A) Qg (Typ.) TrenchFET Power MOSFET 0.025 at VGS = - 10 V - 18e Low Thermal Resistance PowerPAK RoHS - 40 41 nC Package with Small Size and Low 1.07 mm COMPLIANT 0.033 at VGS = - 4.5V - 18e Profile 100 % Rg and UIS Tested APPLI... See More ⇒

 9.1. Size:122K  vishay
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SI7611DN

New Product Si7619DN Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition TrenchFET Power MOSFET 0.021 at VGS = - 10 V - 24e - 30 15 nC 100 % Rg Tested 0.034 at VGS = - 4.5 V - 18.7 100 % UIS Tested PowerPAK 1212-8 Compliant to RoHS Directiv... See More ⇒

 9.2. Size:639K  vishay
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SI7611DN

Si7615CDN www.vishay.com Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PowerPAK 1212-8 Single D TrenchFET Gen III p-channel power MOSFET D 8 D 7 RDS(on) rating at VGS = -1.8 V D 6 5 100 % Rg and UIS tested Material categorization for definitions of compliance please see www.vishay.com/doc?99912 1 1 2 S S 3 S APPLICATIONS S 4 S 1 G... See More ⇒

 9.3. Size:122K  vishay
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SI7611DN

New Product Si7615DN Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.0039 at VGS = - 10 V - 35a TrenchFET Gen III P-Channel Power MOSFET 0.0055 at VGS = - 4.5 V - 20 100 % Rg Tested - 35a 62 nC 100 % UIS Tested 0.0098 at VGS = - 2.5 V - 35a ... See More ⇒

Detailed specifications: SI7483ADP , SI7485DP , SI7489DP , SI7491DP , SI7495DP , SI7540ADP , SI7540DP , SI7601DN , IRF3205 , SI7613DN , SI7615ADN , SI7615DN , SI7617DN , SI7619DN , SI7620DN , SI7621DN , SI7623DN .

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Keywords - SI7611DN MOSFET specs

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