SI7860DP MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SI7860DP
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 1.8 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 11 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 13 nC
trⓘ - Время нарастания: 12 ns
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.008 Ohm
Тип корпуса: POWERPAK-SO-8
SI7860DP Datasheet (PDF)
si7860dp.pdf
Si7860DPVishay SiliconixN-Channel Reduced Qg, Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Available0.008 at VGS = 10 V 18 TrenchFET Power MOSFET30 PWM Optimized for High Efficiency0.011 at VGS = 4.5 V 15 New Low Thermal Resistance PowerPAK Package with Low 1.07 mm Profile
si7860adp si7880adp.pdf
Si7860ADPVishay SiliconixN-Channel Reduced Qg, Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.0095 at VGS = 10 V 16 TrenchFET Power MOSFET300.0125 at VGS = 4.5 V PWM Optimized for High Efficiency16 New Low Thermal Resistance PowerPAKPackage with Low 1.07 mm Profile
si7860ad.pdf
Si7860ADPVishay SiliconixN-Channel Reduced Qg, Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.0095 at VGS = 10 V 16 TrenchFET Power MOSFET300.0125 at VGS = 4.5 V PWM Optimized for High Efficiency16 New Low Thermal Resistance PowerPAKPackage with Low 1.07 mm Profile
si7864adp.pdf
Si7864ADPVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free availableVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFETS: 2.5 V RatedRoHS0.003 at VGS = 4.5 V 29COMPLIANT Low 3.5 m RDS(on)20 570.0042 at VGS = 2.5 V 25 PWM (Qgd and Rg) Optimized 100 % Rg TestedAPPLICATIONSPowerPAK SO-8 Low
si7862adp.pdf
Si7862ADPVishay SiliconixN-Channel 16-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free availableVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFETS: 2.5 V RatedRoHS0.003 at VGS = 4.5 V 29COMPLIANT Low 3.3 m RDS(on)16 540.0055 at VGS = 2.5 V 23 Low Gate Resistance 100 % Rg Tested APPLICATIONSPowerPAK SO-8 Synchron
si7866adp.pdf
Si7866ADPVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free availableVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFETRoHS0.0024 at VGS = 10 V 40 Low RDS(on)COMPLIANT20 39 nC0.0030 at VGS = 4.5 V 40 PWM (Qgd and Rg) Optimized 100 % Rg TestedPowerPAK SO-8APPLICATIONS Low-Side MOSFET in Syn
si7868adp.pdf
Si7868ADPVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free availableVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFETRoHS0.00225 at VGS = 10 V 40COMPLIANT Low RDS(on)20 46 nC0.00275 at VGS = 4.5 V 40 PWM (Qgd and Rg) Optimized 100 % Rg TestedPowerPAK SO-8APPLICATIONS Low Output Voltage
si7866dp.pdf
Si7866DPVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESD TrenchFETr Power MOSFETPRODUCT SUMMARYD Low rDS(on)D PWM (Qgd and Rg) OptimizedVDS (V) rDS(on) (W) ID (A)D 100% Rg Tested0.0025 @ VGS = 10 V 29APPLICATIONS20200.00375 @ VGS = 4.5 V 25D Low-Side MOSFET in Synchronous BuckDC/DC Converters in DesktopsD Low Output Voltage Synchronous RectifierPowerPAKr
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