SI7892BDP - Даташиты. Аналоги. Основные параметры

Si7892BDPVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free availableVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFETRoHS0.0042 at VGS = 10 V 25 New Low Thermal Resistance PowerPAK COMPLIANT30 270.0057 at VGS = 4.5 V 22Package with Low 1.07 mm Profile Low Gate Charge 100 % Rg Tested PowerPAK SO-8

Si7892ADPVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFETRoHS 0.0042 at VGS = 10 V 2530 25 COMPLIANT New Low Thermal Resistance PowerPAK 0.0057 at VGS = 4.5 V 22Package with Low 1.07 mm Profile Low Gate Charge 100 % Rg TestedAPPLICATION Sy

Si7894ADPVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Available0.0036 at VGS = 10 V 25 TrenchFET Power MOSFET30 58 Optimized for Low Side Synchronous 0.0045 at VGS = 4.5 V 23Rectifier Operation New Low Thermal Resistance PowerPAKPackage w

Si7898DPVishay SiliconixN-Channel 150-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.085 at VGS = 10 V 4.8 TrenchFET Power MOSFETs 1500.095 at VGS = 6.0 V for Fast Switching4.5 New Low Thermal Resistance PowerPAK Package with Low 1.07 mm Profile PWM OptimizedPowerPAK SO-8

SMD Type MOSFETN-Channel MOSFETSI7898DP (KI7898DP) SO-8 (DFN5X6)PowerPAK Features VDS (V) = 150VS6.15 mm 5.15 mm1S ID = 4.8 A (VGS = 10V)2SD3G RDS(ON) 87m (VGS = 10V)4D RDS(ON) 98m (VGS = 4.5V)8D7D6D5GBottom ViewS Absolute Maximum Ratings Ta = 25Parameter Symbol 10s Steady State Unit Drain-S