HY1607P - Даташиты. Аналоги. Основные параметры

SD GSDG SSDDGG TO-220FB-3L TO-220FB-3M TO-263-2L TO-3PM-3L SDG SSD

HY1607PN-Channel Enhancement Mode MOSFETFeatures Pin Description 68V/70ARDS(ON)= 6.5m (typ.) @ VGS=10V100% avalanche testedGD Reliable and Rugged S Lead Free and Green Devices Available D(RoHS Compliant)ApplicationsGSwitching application Power Management for Inverter Systems.SN-Channel MOSFETOrdering and Marking InformationPackage CodeP : T

HY1607D/U/VN-Channel Enhancement Mode MOSFETFeaturesPin Description 68V/70ARDS(ON)= 6.8m(typ.) @ VGS=10V 100% avalanche tested Reliable and Rugged SDG Lead Free and Green Devices AvailableSD(RoHS Compliant)GTO-252-2L TO-251-3LApplications Power Management for Inverter Systems.N-Channel MOSFETOrdering and Marking InformationPackage Cod

HY1606P/BN-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/66ARDS(ON)= 10.4 m(typ.) @ VGS=10V 100% avalanche tested Reliable and RuggedS Lead Free and Green Devices AvailableDG(RoHS Compliant)SDGTO-220FB-3L TO-263-2LApplicationsSwitching application Power Management for Inverter Systems.N-Channel MOSFETOrdering and

HY1606P/BN-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/66ARDS(ON)= 10.4 m(typ.) @ VGS=10V 100% avalanche tested Reliable and RuggedS Lead Free and Green Devices AvailableDG(RoHS Compliant)SDGTO-220FB-3L TO-263-2LApplicationsSwitching application Power Management for Inverter Systems.N-Channel MOSFETOrdering and

HY1603D/U/SN-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/62A,RDS(ON)= 4.0m (typ.) @ VGS=10V 100% EAS Guaranteed Super Low Gate Charge SSD Excellent CdV/dt effect decline DGG Advanced high cell density Trench technology SDG Halogen - Free Device Available TO-251-3L TO-251-3LTO-252-2LApplicationsD High Frequency Synchronous Buck

HY1606D/U/VN-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/66A,RDS(ON)=10.4 m(typ.) @ VGS=10V Avalanche Rated Reliable and RuggedSDSS Lead Free and Green Devices AvailableGDDGG(RoHS Compliant)SDGTO-251-3L TO-251-3LTO-252-2LApplications Power Management for Inverter Systems.N-Channel MOSFETOrdering and Marki

HY1603P/BN-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/62A,RDS(ON)= 4.8m (typ.) @ VGS=10V 100% EAS Guaranteed Super Low Gate Charge Excellent CdV/dt effect decline SD Advanced high cell density Trench technology G Halogen - Free Device Available SDGTO-263-2LTO-263-2LTO-220FB-3LTO-220FB-3LApplicationsD High Frequency Synchronous