Spec. No. : C976J3 Issued Date : 2014.09.15 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 200VMTA55N20J3 ID@VGS=10V 25AVGS=10V, ID=11A 52m RDSON(TYP) VGS=4.5V, ID=5A 52m Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package Equivalent Circuit Outline TO-252(DPAK)

Spec. No. : C323N3 Issued Date : 2013.12.27 CYStech Electronics Corp.Revised Date : Page No. : 1/8 20V N-CHANNEL Enhancement Mode MOSFET BVDSS 20VMTA55N02N3 ID 3.6A29m(typ.)RDSON(MAX)@VGS=4.5V, ID=3.6A 39m(typ.)RDSON(MAX)@VGS=2.5V, ID=3.1A Features Simple drive requirement Small package outline Capable of 2.5V gate drive Pb-free lead platin

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