APQ10SN65AF datasheet, аналоги, основные параметры

Наименование производителя: APQ10SN65AF  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 52 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 10 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 70 ns

Cossⓘ - Выходная емкость: 160 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.9 Ohm

Тип корпуса: TO-220F

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Аналог (замена) для APQ10SN65AF

- подборⓘ MOSFET транзистора по параметрам

 

APQ10SN65AF даташит

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 apq10sn65af apq10sn65ah.pdf pdf_icon

APQ10SN65AF

DEVICE SPECIFICATION APQ10SN65AH APQ10SN65AF 650V/10A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power 650V / 10A field effect transistors are produced using planar RDS(on) = 0.75 (typ) VGS = 10 V ,ID =5A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailo

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 apq10sn60af.pdf pdf_icon

APQ10SN65AF

DEVICE SPECIFICATION APQ10SN60AH APQ10SN60AF 600V/10A N-Channel MOSFET Description 1 Features These N-Channel enhancement mode power field 600V / 10A effect transistors are produced using planar stripe, RDS(on) =0.6 (Typ) VGS =10V, ID =6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to mi

 6.2. Size:437K  alpha pacific
 apq10sn60a.pdf pdf_icon

APQ10SN65AF

DEVICE SPECIFICATION apQ10SN60A(F) 600V/10A N-Channel MOSFET Description 1 Features These N-Channel enhancement mode power field 600V / 10A RDS(on) =0.6 (Typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-stat

 6.3. Size:687K  alpha pacific
 apq10sn60ah.pdf pdf_icon

APQ10SN65AF

DEVICE SPECIFICATION APQ10SN60AH APQ10SN60AF 600V/10A N-Channel MOSFET Description 1 Features These N-Channel enhancement mode power field 600V / 10A effect transistors are produced using planar stripe, RDS(on) =0.6 (Typ) VGS =10V, ID =6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to mi

ПОКАЗАТЬ ЕЩЁ

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