APQ10SN65AF Datasheet. Specs and Replacement

Type Designator: APQ10SN65AF  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 52 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 70 nS

Cossⓘ - Output Capacitance: 160 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm

Package: TO-220F

  📄📄 Copy 

APQ10SN65AF substitution

- MOSFET ⓘ Cross-Reference Search

 

APQ10SN65AF datasheet

 ..1. Size:373K  alpha pacific
apq10sn65af apq10sn65ah.pdf pdf_icon

APQ10SN65AF

DEVICE SPECIFICATION APQ10SN65AH APQ10SN65AF 650V/10A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power 650V / 10A field effect transistors are produced using planar RDS(on) = 0.75 (typ) VGS = 10 V ,ID =5A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailo... See More ⇒

 6.1. Size:687K  alpha pacific
apq10sn60af.pdf pdf_icon

APQ10SN65AF

DEVICE SPECIFICATION APQ10SN60AH APQ10SN60AF 600V/10A N-Channel MOSFET Description 1 Features These N-Channel enhancement mode power field 600V / 10A effect transistors are produced using planar stripe, RDS(on) =0.6 (Typ) VGS =10V, ID =6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to mi... See More ⇒

 6.2. Size:437K  alpha pacific
apq10sn60a.pdf pdf_icon

APQ10SN65AF

DEVICE SPECIFICATION apQ10SN60A(F) 600V/10A N-Channel MOSFET Description 1 Features These N-Channel enhancement mode power field 600V / 10A RDS(on) =0.6 (Typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-stat... See More ⇒

 6.3. Size:687K  alpha pacific
apq10sn60ah.pdf pdf_icon

APQ10SN65AF

DEVICE SPECIFICATION APQ10SN60AH APQ10SN60AF 600V/10A N-Channel MOSFET Description 1 Features These N-Channel enhancement mode power field 600V / 10A effect transistors are produced using planar stripe, RDS(on) =0.6 (Typ) VGS =10V, ID =6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to mi... See More ⇒

Detailed specifications: APQ0CSN60AJ, APQ0DSN60AJ, APQ10SN40A, APQ10SN40AF, APQ10SN40AH, APQ10SN60A, APQ10SN60AF, APQ10SN60AH, AON6426, APQ10SN65AH, APQ110SN5EA, APQ110SN5EAD, APQ110SN5EAH, APQ11BSN40A, APQ12SN60A, APQ12SN60AF, APQ12SN60AH

Keywords - APQ10SN65AF MOSFET specs

 APQ10SN65AF cross reference

 APQ10SN65AF equivalent finder

 APQ10SN65AF pdf lookup

 APQ10SN65AF substitution

 APQ10SN65AF replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs