Справочник MOSFET. CEDM7004VL

 

CEDM7004VL Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: CEDM7004VL
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 0.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 0.45 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   Cossⓘ - Выходная емкость: 8 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.46 Ohm
   Тип корпуса: SOT-883VL
 

 Аналог (замена) для CEDM7004VL

   - подбор ⓘ MOSFET транзистора по параметрам

 

CEDM7004VL Datasheet (PDF)

 ..1. Size:1044K  central
 cedm7004vl.pdf pdf_icon

CEDM7004VL

CEDM7004VLSURFACE MOUNT SILICONwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CEDM7004VL is anMOSFETN-Channel Enhancement-mode MOSFET, manufactured by the N-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers low rDS(ON) and low threshold voltage.MARKING CODE: SCOMPLEMENTARY P-CHA

 6.1. Size:1035K  central
 cedm7004.pdf pdf_icon

CEDM7004VL

CEDM7004SURFACE MOUNTwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CEDM7004 SILICON MOSFETis an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(on) and Low Threshold Voltage.MARKING CODE: SFEA

 7.1. Size:358K  central
 cedm7001.pdf pdf_icon

CEDM7004VL

CEDM7001SURFACE MOUNTwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CEDM7001 is SILICON MOSFETan N-Channel Enhancement-mode Silicon MOSFET, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Theshold Voltage.MARKING CODE: HFEATURES:

 7.2. Size:219K  central
 cedm7001e.pdf pdf_icon

CEDM7004VL

TMCEDM7001ECentralSemiconductor Corp.SURFACE MOUNTN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CEDM7001E is anSILICON MOSFETEnhancement-mode N-Channel Field Effect Transistor,manufactured by the N-Channel DMOS Process, designed forhigh speed pulsed amplifier and driver applications.This MOSFET offers Low rDS(on) and Low Theshold Voltage.FEATURES:

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... CED05N8 , CED5175 , CED6042 , CEDM7001 , CEDM7001E , CEDM7001VL , CEDM7002AE , CEDM7004 , IRF1407 , CEDM8001 , CEDM8001VL , CEDM8004 , CEDM8004VL , CEEF02N65G , CEF05N8 , CEF18N5 , CEF30N3 .

History: RJK2017DPP | BSC072N03LDG | 2SK1985

 

 
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