IRFS750A. Аналоги и основные параметры
Наименование производителя: IRFS750A
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 49 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 400 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 8.4 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 22 ns
Cossⓘ - Выходная емкость: 305 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.3 Ohm
Тип корпуса: TO220F
Аналог (замена) для IRFS750A
- подборⓘ MOSFET транзистора по параметрам
IRFS750A даташит
..1. Size:278K 1
irfs750a.pdf 

IRFS750A Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input Capacitance ID = 8.4 A Improved Gate Charge Extended Safe Operating Area TO-220F Lower Leakage Current 10 A (Max.) @ VDS = 400V Low RDS(ON) 0.254 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbo
8.1. Size:656K international rectifier
irfb7534 irfs7534pbf irfsl7534pbf.pdf 

StrongIRFET IRFB7534PbF IRFS7534PbF IRFSL7534PbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 60V D BLDC Motor drive applications Battery powered circuits RDS(on) typ. 2.0m Half-bridge and full-bridge topologies max 2.4m G Synchronous rectifier applications ID (Silicon Limited) 232A
8.2. Size:654K international rectifier
irfb7537 irfs7537pbf irfsl7537pbf.pdf 

StrongIRFET IRFB7537PbF IRFS7537PbF IRFSL7537PbF HEXFET Power MOSFET Application Brushed Motor drive applications D VDSS 60V BLDC Motor drive applications Battery powered circuits RDS(on) typ. 2.75m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 3.30m Resonant mode power sup
8.3. Size:655K international rectifier
irfb7530 irfs7530pbf irfsl7530pbf.pdf 

StrongIRFET IRFB7530PbF IRFS7530PbF IRFSL7530PbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 60V D BLDC Motor drive applications Battery powered circuits RDS(on) typ. 1.65m Half-bridge and full-bridge topologies max 2.00m G Synchronous rectifier applications ID (Silicon Limited) 295A
8.4. Size:516K international rectifier
irfs7534-7ppbf.pdf 

StrongIRFET IRFS7534-7PPbF HEXFET Power MOSFET Application Brushed motor drive applications BLDC motor drive applications VDSS 60V D Battery powered circuits RDS(on) typ. 1.60m Half-bridge and full-bridge topologies max 1.95m Synchronous rectifier applications G Resonant mode power supplies ID (Silicon Limit
8.5. Size:565K international rectifier
irfs7530-7ppbf.pdf 

StrongIRFET IRFS7530-7PPbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 60V BLDC Motor drive applications D RDS(on) typ. Battery powered circuits 1.15m Half-bridge and full-bridge topologies max 1.4m G Synchronous rectifier applications ID (Silicon Limited) 338A S Resonant mode
8.6. Size:655K international rectifier
irfb7540 irfs7540pbf irfsl7540pbf.pdf 

StrongIRFET IRFB7540PbF IRFS7540PbF IRFSL7540PbF HEXFET Power MOSFET Application Brushed Motor drive applications D VDSS 60V BLDC Motor drive applications Battery powered circuits RDS(on) typ. 4.2m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 5.1m Resonant mode power sup
8.7. Size:655K international rectifier
irfb7530pbf irfs7530pbf irfsl7530pbf.pdf 

StrongIRFET IRFB7530PbF IRFS7530PbF IRFSL7530PbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 60V D BLDC Motor drive applications Battery powered circuits RDS(on) typ. 1.65m Half-bridge and full-bridge topologies max 2.00m G Synchronous rectifier applications ID (Silicon Limited) 295A
8.8. Size:252K inchange semiconductor
irfs7540.pdf 

isc N-Channel MOSFET Transistor IRFS7540 FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S
8.9. Size:215K inchange semiconductor
irfs7534trlpbf.pdf 

isc N-Channel MOSFET Transistor IRFS7534TRLPBF DESCRIPTION Drain Current I =232 A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhan
8.10. Size:258K inchange semiconductor
irfs7530.pdf 

isc N-Channel MOSFET Transistor IRFS7530 FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S
8.11. Size:257K inchange semiconductor
irfs7537.pdf 

isc N-Channel MOSFET Transistor IRFS7537 FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S
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