IRFS750A MOSFET. Datasheet pdf. Equivalent

   Type Designator: IRFS750A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 49 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 8.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 101 nC
   trⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 305 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO220F

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IRFS750A Datasheet (PDF)

..1. Size:278K 1
irfs750a.pdf pdf_icon

IRFS750AAdvanced Power MOSFETFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = 8.4 A Improved Gate Charge Extended Safe Operating AreaTO-220F Lower Leakage Current : 10 A (Max.) @ VDS = 400V Low RDS(ON) : 0.254 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbo

8.1. Size:656K international rectifier
irfb7534 irfs7534pbf irfsl7534pbf.pdf pdf_icon

StrongIRFET IRFB7534PbF IRFS7534PbF IRFSL7534PbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 60V D BLDC Motor drive applications Battery powered circuits RDS(on) typ. 2.0m Half-bridge and full-bridge topologies max 2.4mG Synchronous rectifier applications ID (Silicon Limited) 232A

8.2. Size:654K international rectifier
irfb7537 irfs7537pbf irfsl7537pbf.pdf pdf_icon

StrongIRFET IRFB7537PbF IRFS7537PbF IRFSL7537PbF HEXFET Power MOSFET Application Brushed Motor drive applications D VDSS 60V BLDC Motor drive applications Battery powered circuits RDS(on) typ. 2.75m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 3.30m Resonant mode power sup

8.3. Size:655K international rectifier
irfb7530 irfs7530pbf irfsl7530pbf.pdf pdf_icon

StrongIRFET IRFB7530PbF IRFS7530PbF IRFSL7530PbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 60V D BLDC Motor drive applications Battery powered circuits RDS(on) typ. 1.65m Half-bridge and full-bridge topologies max 2.00mG Synchronous rectifier applications ID (Silicon Limited) 295A

8.4. Size:516K international rectifier
irfs7534-7ppbf.pdf pdf_icon

StrongIRFET IRFS7534-7PPbF HEXFET Power MOSFET Application Brushed motor drive applications BLDC motor drive applications VDSS 60V D Battery powered circuits RDS(on) typ. 1.60m Half-bridge and full-bridge topologies max 1.95m Synchronous rectifier applications G Resonant mode power supplies ID (Silicon Limit

8.5. Size:565K international rectifier
irfs7530-7ppbf.pdf pdf_icon

StrongIRFET IRFS7530-7PPbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 60V BLDC Motor drive applications DRDS(on) typ. Battery powered circuits 1.15m Half-bridge and full-bridge topologies max 1.4mG Synchronous rectifier applications ID (Silicon Limited) 338A S Resonant mode

8.6. Size:655K international rectifier
irfb7540 irfs7540pbf irfsl7540pbf.pdf pdf_icon

StrongIRFET IRFB7540PbF IRFS7540PbF IRFSL7540PbF HEXFET Power MOSFET Application Brushed Motor drive applications DVDSS 60V BLDC Motor drive applications Battery powered circuits RDS(on) typ. 4.2m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 5.1m Resonant mode power sup

8.7. Size:565K infineon
irfs7530-7ppbf.pdf pdf_icon

8.8. Size:655K infineon
irfb7530pbf irfs7530pbf irfsl7530pbf.pdf pdf_icon

8.9. Size:252K inchange semiconductor
irfs7540.pdf pdf_icon

isc N-Channel MOSFET Transistor IRFS7540FEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

8.10. Size:215K inchange semiconductor
irfs7534trlpbf.pdf pdf_icon

isc N-Channel MOSFET Transistor IRFS7534TRLPBFDESCRIPTIONDrain Current I =232 A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhan

8.11. Size:258K inchange semiconductor
irfs7530.pdf pdf_icon

isc N-Channel MOSFET Transistor IRFS7530FEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

8.12. Size:257K inchange semiconductor
irfs7537.pdf pdf_icon

isc N-Channel MOSFET Transistor IRFS7537FEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

Datasheet: IRFS731 , IRFS732 , IRFS733 , IRFS740 , IRFS740A , IRFS741 , IRFS742 , IRFS743 , MMD60R360PRH , IRFS820 , IRFS820A , IRFS821 , IRFS822 , IRFS823 , IRFS830 , IRFS830A , IRFS831 .

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IRFS750A MOSFET. Datasheet pdf. Equivalent

IRFS750A Datasheet (PDF)

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