IRFS820A PDF and Equivalents Search

 

IRFS820A Specs and Replacement

Type Designator: IRFS820A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 33 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm

Package: TO220F

IRFS820A substitution

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IRFS820A datasheet

 ..1. Size:502K  samsung
 irfs820a.pdf pdf_icon

IRFS820A

Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 500V Lower RDS(ON) 2.000 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Va... See More ⇒

 7.1. Size:284K  1
 irfs820 irfs821.pdf pdf_icon

IRFS820A

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 7.2. Size:310K  1
 irfs820 irfs821 irfs822 irfs823.pdf pdf_icon

IRFS820A

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 7.3. Size:866K  fairchild semi
 irf820b irfs820b.pdf pdf_icon

IRFS820A

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Detailed specifications: IRFS733 , IRFS740 , IRFS740A , IRFS741 , IRFS742 , IRFS743 , IRFS750A , IRFS820 , IRF1405 , IRFS821 , IRFS822 , IRFS823 , IRFS830 , IRFS830A , IRFS831 , IRFS832 , IRFS833 .

History: IRFS823

Keywords - IRFS820A MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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