All MOSFET. IRFS820A Datasheet

 

IRFS820A Datasheet and Replacement


   Type Designator: IRFS820A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: TO220F
 

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IRFS820A Datasheet (PDF)

 ..1. Size:502K  samsung
 irfs820a.pdf pdf_icon

IRFS820A

Advanced Power MOSFETFEATURESBVDSS = 500 V Avalanche Rugged TechnologyRDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2.1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 500V Lower RDS(ON) : 2.000 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Va

 7.1. Size:284K  1
 irfs820 irfs821.pdf pdf_icon

IRFS820A

 7.2. Size:310K  1
 irfs820 irfs821 irfs822 irfs823.pdf pdf_icon

IRFS820A

 7.3. Size:866K  fairchild semi
 irf820b irfs820b.pdf pdf_icon

IRFS820A

November 2001IRF820B/IRFS820B500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.5A, 500V, RDS(on) = 2.6 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 14 nC)planar, DMOS technology. Low Crss ( typical 10 pF)This advanced technology has been especially tailored to

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Datasheet: IRFS733 , IRFS740 , IRFS740A , IRFS741 , IRFS742 , IRFS743 , IRFS750A , IRFS820 , NCEP15T14 , IRFS821 , IRFS822 , IRFS823 , IRFS830 , IRFS830A , IRFS831 , IRFS832 , IRFS833 .

Keywords - IRFS820A MOSFET datasheet

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