IRFS830 - параметры транзистора MOSFET, его аналоги, datasheet

IRFS830 Даташит. Основные параметры и характеристики. Поиск аналогов

   Наименование прибора: IRFS830
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 35 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 15 ns
   Cossⓘ - Выходная емкость: 86 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.5 Ohm
   Тип корпуса: TO220F

Аналог (замена) для IRFS830

- подбор MOSFET транзистора по параметрам

IRFS830 Datasheet (PDF)

..1. Size:284K 1
irfs830 irfs831.pdf pdf_icon

..2. Size:308K 1
irfs830 irfs831 irfs832 irfs833.pdf pdf_icon

..3. Size:930K blue-rocket-elect
irfs830.pdf pdf_icon

IRFS830 Rev.E Dec.-2015 DATA SHEET / Descriptions TO-220F N MOS N-CHANNEL MOSFET in a TO-220F Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficiency

0.1. Size:888K fairchild semi
irf830b irfs830b.pdf pdf_icon

November 2001IRF830B/IRFS830B500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.5A, 500V, RDS(on) = 1.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 27 nC)planar, DMOS technology. Low Crss ( typical 17 pF)This advanced technology has been especially tailored to

0.2. Size:499K samsung
irfs830a.pdf pdf_icon

Advanced Power MOSFETFEATURESBVDSS = 500 V Avalanche Rugged TechnologyRDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = 3.1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 500V Lower RDS(ON) : 1.169 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic V

9.1. Size:284K 1
irfs820 irfs821.pdf pdf_icon

9.2. Size:316K 1
irfs840 irfs841 irfs842 irfs843.pdf pdf_icon

9.3. Size:310K 1
irfs820 irfs821 irfs822 irfs823.pdf pdf_icon

9.4. Size:277K international rectifier
auirfs8403 auirfsl8403.pdf pdf_icon

AUIRFS8403AUTOMOTIVE GRADEAUIRFSL8403HEXFET Power MOSFETFeaturesl Advanced Process TechnologyDVDSS 40Vl New Ultra Low On-Resistancel 175C Operating TemperatureRDS(on) typ. 2.6ml Fast Switchingl Repetitive Avalanche Allowed up to TjmaxG max. 3.3ml Lead-Free, RoHS Compliant Automotive Qualified *SID (Silicon Limited) 123ADescriptionSpecifically desi

9.5. Size:277K international rectifier
auirfs8409-7p.pdf pdf_icon

AUIRFS8409-7PAUTOMOTIVE GRADEFeaturesHEXFET Power MOSFETl Advanced Process Technology40VVDSSl New Ultra Low On-Resistance0.55mRDS(on) typ. l 175C Operating Temperature max. 0.75ml Fast Switchingl Repetitive Avalanche Allowed up to Tjmax522AID (Silicon Limited)l Lead-Free, RoHS Compliant240A ID (Package Limited)l Automotive Qualified *Description

9.6. Size:398K international rectifier
auirfb8409 auirfs8409 auirfsl8409.pdf pdf_icon

AUIRFB8409AUTOMOTIVE GRADE AUIRFS8409AUIRFSL8409FeaturesHEXFET Power MOSFETl Advanced Process TechnologyDl New Ultra Low On-Resistance VDSS 40Vl 175C Operating TemperatureRDS(on) (SMD) typ. 0.97ml Fast Switching max. 1.2ml Repetitive Avalanche Allowed up to TjmaxGl Lead-Free, RoHS Compliant ID (Silicon Limited) 409Al Automotive Qualified *ID (Package Li

9.7. Size:351K international rectifier
auirfs8405 auirfsl8405.pdf pdf_icon

AUIRFS8405AUTOMOTIVE GRADEAUIRFSL8405FeaturesHEXFET Power MOSFETl Advanced Process TechnologyDl New Ultra Low On-Resistance VDSS 40Vl 175C Operating TemperatureRDS(on) typ.1.9ml Fast Switching max. 2.3ml Repetitive Avalanche Allowed up to Tjmaxl Lead-Free, RoHS Compliant GID (Silicon Limited) 193Al Automotive Qualified *ID (Package Limited) 120A SDe

9.8. Size:340K international rectifier
auirfb8407 auirfs8407 auirfsl8407.pdf pdf_icon

AUIRFB8407AUTOMOTIVE GRADEAUIRFS8407AUIRFSL8407FeaturesHEXFET Power MOSFETl Advanced Process Technologyl New Ultra Low On-ResistanceVDSS 40VDl 175C Operating TemperatureRDS(on) typ. 1.4ml Fast Switching l Repetitive Avalanche Allowed up to Tjmax(SMD version) max. 1.8m l Lead-Free, RoHS CompliantG250AID (Silicon Limited) Automotive Qualified *S

9.9. Size:220K international rectifier
auirfs8407-7p.pdf pdf_icon

AUTOMOTIVE GRADEAUIRFS8407-7PFeaturesHEXFET Power MOSFET Advanced Process TechnologyD New Ultra Low On-ResistanceVDSS 40V 175C Operating TemperatureRDS(on) typ.1.0m Fast Switching Repetitive Avalanche Allowed up to Tjmax max. 1.3m Lead-Free, RoHS CompliantGID (Silicon Limited) 306A Automotive Qualified *DescriptionID (Package L

9.10. Size:291K international rectifier
auirfs8408 auirfsl8408.pdf pdf_icon

AUIRFS8408AUTOMOTIVE GRADEAUIRFSL8408FeaturesHEXFET Power MOSFETl Advanced Process TechnologyVDSS 40Vl New Ultra Low On-Resistancel 175C Operating TemperatureRDS(on) typ. 1.3ml Fast Switching max. 1.6ml Repetitive Avalanche Allowed up to TjmaxID (Silicon Limited) 317Al Lead-Free, RoHS Compliantl Automotive Qualified *ID (Package Limited) 195A Descri

9.11. Size:275K international rectifier
auirfs8408-7p.pdf pdf_icon

AUIRFS8408-7PAUTOMOTIVE GRADEFeaturesHEXFET Power MOSFETl Advanced Process Technology40VVDSSl New Ultra Low On-Resistance0.70mRDS(on) typ. l 175C Operating Temperaturel Fast Switching max. 1.0ml Repetitive Avalanche Allowed up to Tjmax397AID (Silicon Limited)l Lead-Free, RoHS Compliant240A ID (Package Limited)l Automotive Qualified *Description

9.12. Size:866K fairchild semi
irf820b irfs820b.pdf pdf_icon

November 2001IRF820B/IRFS820B500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.5A, 500V, RDS(on) = 2.6 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 14 nC)planar, DMOS technology. Low Crss ( typical 10 pF)This advanced technology has been especially tailored to

9.13. Size:911K fairchild semi
irf840b irfs840b.pdf pdf_icon

November 2001IRF840B/IRFS840B500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8.0A, 500V, RDS(on) = 0.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 41 nC)planar, DMOS technology. Low Crss ( typical 35 pF)This advanced technology has been especially tailored to

9.14. Size:26K samsung
irfs8xx irfs9xxx sss4n60 sss6n60.pdf pdf_icon

9.15. Size:511K samsung
irfs840a.pdf pdf_icon

Advanced Power MOSFETFEATURESBVDSS = 500 V Avalanche Rugged TechnologyRDS(on) = 0.85 Rugged Gate Oxide Technology Lower Input CapacitanceID = 4.6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 500V Lower RDS(ON) : 0.638 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic V

9.16. Size:502K samsung
irfs820a.pdf pdf_icon

Advanced Power MOSFETFEATURESBVDSS = 500 V Avalanche Rugged TechnologyRDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2.1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 500V Lower RDS(ON) : 2.000 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Va

9.17. Size:822K blue-rocket-elect
irfs840.pdf pdf_icon

IRFS840 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-220F N MOS N-CHANNEL MOSFET in a TO-220F Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficiency

Другие MOSFET... IRFS742 , IRFS743 , IRFS750A , IRFS820 , IRFS820A , IRFS821 , IRFS822 , IRFS823 , IRFZ48N , IRFS830A , IRFS831 , IRFS832 , IRFS833 , IRFS840 , IRFS840A , IRFS841 , IRFS842 .