PHD50N06LT - аналоги, даташиты, параметры транзистора

PHD50N06LT Datasheet (PDF)

..1. Size:156K philips
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Philips Semiconductors Product specification TrenchMOS transistor PHP50N06LT, PHB50N06LT, PHD50N06LT Logic level FETFEATURES SYMBOL QUICK REFERENCE DATA Trench technology VDSS = 55 Vd Very low on-state resistance Fast switching ID = 50 A Stable off-state characteristics High thermal cycling performance RDS(ON) 24 m (VGS = 5 V)g Low thermal

..2. Size:261K inchange semiconductor
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Isc N-Channel MOSFET Transistor PHD50N06LTFEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol

7.1. Size:111K philips
phb50n03lt phd50n03lt php50n03lt 7.pdf pdf_icon

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP50N03LT, PHB50N03LT Logic level FET PHD50N03LT FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 25 V Very low on-state resistance Fast switching ID = 48 A High thermal cycling performance Low thermal resistance RDS(ON) 16 m (VGS = 10 V)g Logic leve

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