TK6A65W - описание и поиск аналогов

TK6A65W MOSFETs Silicon N-Channel MOS (DTMOS ) TK6A65W TK6A65W TK6A65W TK6A65W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.85 (typ.) by using Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enhancement

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK6A65W ITK6A65W FEATURES Low drain-source on-resistance RDS(ON) = 0.85 (typ.) Enhancement mode Vth = 2.5 to 3.5V (VDS = 10 V, ID=0.18mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(

TK6A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS VII) TK6A65D Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.95 (typ.) High forward transfer admittance Yfs = 4.0 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 650 V) Enhancement-mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK6A65D ITK6A65D FEATURES Low drain-source on-resistance RDS(ON) = 0.95 (typ.) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T

TK6A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK6A60D Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 1.0 (typ.) High forward transfer admittance Yfs = 3.0 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 600 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolu

TK6A60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK6A60W TK6A60W TK6A60W TK6A60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.68 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enhance

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK6A60W ITK6A60W FEATURES Low drain-source on-resistance RDS(ON) = 0.68 (typ.) Easy to control Gate switching Enhancement mode Vth = 2.7 to 3.7V (VDS = 10 V, ID=0.31mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulat