Справочник MOSFET. TK6A65W

 

TK6A65W MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: TK6A65W
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 30 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 5.8 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 11 nC
   trⓘ - Время нарастания: 14 ns
   Cossⓘ - Выходная емкость: 12 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1 Ohm
   Тип корпуса: TO-220SIS

 Аналог (замена) для TK6A65W

 

 

TK6A65W Datasheet (PDF)

 ..1. Size:376K  toshiba
 tk6a65w.pdf

TK6A65W TK6A65W

TK6A65WMOSFETs Silicon N-Channel MOS (DTMOS)TK6A65WTK6A65WTK6A65WTK6A65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.85 (typ.)by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enhancement

 ..2. Size:253K  inchange semiconductor
 tk6a65w.pdf

TK6A65W TK6A65W

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK6A65WITK6A65WFEATURESLow drain-source on-resistance: RDS(ON) = 0.85 (typ.)Enhancement mode: Vth = 2.5 to 3.5V (VDS = 10 V, ID=0.18mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(

 8.1. Size:199K  toshiba
 tk6a65d.pdf

TK6A65W TK6A65W

TK6A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS VII) TK6A65D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.95 (typ.) High forward transfer admittance: Yfs = 4.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 650 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

 8.2. Size:253K  inchange semiconductor
 tk6a65d.pdf

TK6A65W TK6A65W

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK6A65DITK6A65DFEATURESLow drain-source on-resistance:RDS(ON) = 0.95 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T

 9.1. Size:188K  toshiba
 tk6a60d.pdf

TK6A65W TK6A65W

TK6A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK6A60D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 (typ.) High forward transfer admittance: |Yfs| = 3.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolu

 9.2. Size:237K  toshiba
 tk6a60w.pdf

TK6A65W TK6A65W

TK6A60WMOSFETs Silicon N-Channel MOS (DTMOS)TK6A60WTK6A60WTK6A60WTK6A60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.68 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enhance

 9.3. Size:253K  inchange semiconductor
 tk6a60w.pdf

TK6A65W TK6A65W

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK6A60WITK6A60WFEATURESLow drain-source on-resistance: RDS(ON) = 0.68 (typ.)Easy to control Gate switchingEnhancement mode: Vth = 2.7 to 3.7V (VDS = 10 V, ID=0.31mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Regulat

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top