TMPF12N60 - параметры транзистора MOSFET, его аналоги, datasheet

TMPF12N60 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

   Наименование прибора: TMPF12N60
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 53 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 12 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 39 nC
   trⓘ - Время нарастания: 53 ns
   Cossⓘ - Выходная емкость: 185 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.65 Ohm
   Тип корпуса: TO-220F

Аналог (замена) для TMPF12N60

TMPF12N60 Datasheet (PDF)

..1. Size:332K trinnotech
tmp12n60 tmpf12n60.pdf

TMP12N60/TMPF12N60TMP12N60G/TMPF12N60GVDSS = 660 V @TjmaxFeaturesID = 12A Low gate chargeRDS(on) = 0.65 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC QualificationDGSDevice Package Marking RemarkTMP12N60 / TMPF12N60 TO-220 / TO-220F TMP12N60 / TMPF12N60 RoHSTMP12N60G / TMPF12N60G

0.1. Size:604K trinnotech
tmp12n60a tmpf12n60a.pdf

TMP12N60A(G)/TMPF12N60A(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 12A

9.1. Size:609K trinnotech
tmp10n80 tmpf10n80.pdf

TMP10N80/TMPF10N80 TMP10N80G/TMPF10N80G VDSS = 880 V @Tjmax Features ID = 9.5A Low gate charge RDS(ON) = 1.05 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP10N80 / TMPF10N80 TO-220 / TO-220F TMP10N80 / TMPF10N80 RoHS TMP10N

9.2. Size:625K trinnotech
tmp16n25z tmpf16n25z.pdf

TMP16N25Z(G)/TMPF16N25Z(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 250V 16A

9.3. Size:336K trinnotech
tmp13n50 tmpf13n50.pdf

TMP13N50/TMPF13N50TMP13N50G/TMPF13N50GVDSS = 550 V @TjmaxFeaturesID = 13A Low gate chargeRDS(on) = 0.48 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC QualificationDGSDevice Package Marking RemarkTMP13N50 / TMPF13N50 TO-220 / TO-220F TMP13N50 / TMPF13N50 RoHSTMP13N50G / TMPF13N50G

9.4. Size:340K trinnotech
tmp11n50sg tmpf11n50sg.pdf

TMP11N50SG/TMPF11N50SGVDSS = 550 V @TjmaxFeaturesID = 10A Low gate chargeRDS(ON) = 0.7 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery DGSDevice Package Marking RemarkTMP11N50SG / TMPF11N50SG TO-220 / TO-220F TMP11N50SG / TMPF11N50SG Halogen Fre

9.5. Size:618K trinnotech
tmp16n60a tmpf16n60a.pdf

TMP16N60A(G)/TMPF16N60A(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 16A

9.6. Size:591K trinnotech
tmp18n20z tmpf18n20z.pdf

TMP18N20Z(G)/TMPF18N20Z(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on)MAX 100% avalanche tested 200V 18A

9.7. Size:609K trinnotech
tmp10n60a tmpf10n60a.pdf

TMP10N60A(G)/TMPF10N60A(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 10A

9.8. Size:341K trinnotech
tmp16n60 tmpf16n60.pdf

TMP16N60/TMPF16N60TMP16N60G/TMPF16N60GVDSS = 660 V @TjmaxFeaturesID = 16A Low gate chargeRDS(on) = 0.47 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC QualificationDGSDevice Package Marking RemarkTMP16N60 / TMPF16N60 TO-220 / TO-220F TMP16N60 / TMPF16N60 RoHSTMP16N60G / TMPF16N60G

9.9. Size:335K trinnotech
tmp10n60 tmpf10n60.pdf

TMP10N60/TMPF10N60TMP10N60G/TMPF10N60GVDSS = 660 V @TjmaxFeaturesID = 10A Low gate chargeRDS(on) = 0.75 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC QualificationDGSDevice Package Marking RemarkTMP10N60 / TMPF10N60 TO-220 / TO-220F TMP10N60 / TMPF10N60 RoHSTMP10N60G / TMPF10N60G

9.10. Size:577K trinnotech
tmp10n65 tmpf10n65.pdf

TMP10N65/TMPF10N65 TMP10N65G/TMPF10N65G VDSS = 715 V @Tjmax Features ID = 9.5A Low gate charge RDS(on) = 0.98 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP10N65 / TMPF10N65 TO-220 / TO-220F TMP10N65 / TMPF10N65 RoHS TMP10N

9.11. Size:353K trinnotech
tmp11n50 tmpf11n50.pdf

TMP11N50/TMPF11N50TMP11N50G/TMPF11N50GVDSS = 550 V @TjmaxFeaturesID = 11A Low gate chargeRDS(ON) = 0.67 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery DGSDevice Package Marking RemarkTMP11N50 / TMPF11N50 TO-220 / TO-220F TMP11N50 / TMPF11N50

9.12. Size:343K trinnotech
tmp15n50 tmpf15n50.pdf

TMP15N50/TMPF15N50TMP15N50G/TMPF15N50GVDSS = 550 V @TjmaxFeaturesID = 14A Low gate chargeRDS(on) = 0.44 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC QualificationDGSDevice Package Marking RemarkTMP15N50 / TMPF15N50 TO-220 / TO-220F TMP15N50 / TMPF15N50 RoHSTMP15N50G / TMPF15N50G

9.13. Size:607K trinnotech
tmp10n65a tmpf10n65a.pdf