FQA16N50. Аналоги и основные параметры
Наименование производителя: FQA16N50
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 200 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 500 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 16 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 180 ns
Cossⓘ - Выходная емкость: 325 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.32 Ohm
Тип корпуса: TO-3P
Аналог (замена) для FQA16N50
- подборⓘ MOSFET транзистора по параметрам
FQA16N50 даташит
fqa16n50.pdf
April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 16A, 500V, RDS(on) = 0.32 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 60 nC) planar stripe, DMOS technology. Low Crss ( typical 35 pF) This advanced technology has been
fqa16n25c.pdf
QFET FQA16N25C 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 17.8A, 250V, RDS(on) = 0.27 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 41 nC) planar stripe, DMOS technology. Low Crss ( typical 68 pF) This advanced technology has been especially tailored to F
fqa160n08.pdf
September 2000 TM QFET QFET QFET QFET FQA160N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 160A, 80V, RDS(on) = 0.007 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 220 nC) planar stripe, DMOS technology. Low Crss ( typical 530 pF) This advanced technology has
fqa160n08.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Другие IGBT... FQA11N90C, FQA12N60, FQA12P20, FQA13N50, FQA13N50C, FQA13N80, FQA14N30, FQA16N25C, AO3400A, FQA17N40, FQA17P10, FQA19N20L, FQA20N40, FQA22P10, FQA24N50F109, FQA24N50F, FQA28N15F109
History: FQA6N90 | FQAF12N60
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Список транзисторов
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