April 2011TMQFETFQA28N15150V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 33A, 150V, RDS(on) = 0.09 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 40 nC)planar stripe, DMOS technology. Low Crss ( typical 50 pF)This advanced technology has been especially tailored t

April 2011TMQFETFQA28N15150V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 33A, 150V, RDS(on) = 0.09 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 40 nC)planar stripe, DMOS technology. Low Crss ( typical 50 pF)This advanced technology has been especially tailored t

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur