FQA28N15F109 MOSFET PDF: N-Ch, 150V, 33A. Full specification with pinout and replacement list

FQA28N15F109 PDF Specs and Replacement

   Type Designator: FQA28N15F109
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 227 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 33 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 180 nS
   Cossⓘ - Output Capacitance: 260 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: TO-3PN

FQA28N15F109 substitution

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FQA28N15F109 PDF Specs

6.1. Size:457K fairchild semi
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April 2011 TM QFET FQA28N15 150V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 33A, 150V, RDS(on) = 0.09 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 40 nC) planar stripe, DMOS technology. Low Crss ( typical 50 pF) This advanced technology has been especially tailored t... See More ⇒

6.2. Size:468K fairchild semi
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6.3. Size:2188K onsemi
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

Detailed specifications: FQA16N50 , FQA17N40 , FQA17P10 , FQA19N20L , FQA20N40 , FQA22P10 , FQA24N50F109 , FQA24N50F , IRLB3034 , FQA28N50F109 , FQA28N50F , FQA33N10 , FQA33N10L , FQA34N20 , FQA34N20L , FQA34N25 , FQA35N40 .