All MOSFET. FQA28N15F109 Datasheet

 

FQA28N15F109 Datasheet and Replacement


   Type Designator: FQA28N15F109
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 227 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 33 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 180 nS
   Cossⓘ - Output Capacitance: 260 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: TO-3PN
 

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FQA28N15F109 Datasheet (PDF)

 6.1. Size:457K  fairchild semi
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FQA28N15F109

April 2011TMQFETFQA28N15150V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 33A, 150V, RDS(on) = 0.09 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 40 nC)planar stripe, DMOS technology. Low Crss ( typical 50 pF)This advanced technology has been especially tailored t

 6.2. Size:468K  fairchild semi
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FQA28N15F109

April 2011TMQFETFQA28N15150V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 33A, 150V, RDS(on) = 0.09 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 40 nC)planar stripe, DMOS technology. Low Crss ( typical 50 pF)This advanced technology has been especially tailored t

 6.3. Size:2188K  onsemi
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FQA28N15F109

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Datasheet: FQA16N50 , FQA17N40 , FQA17P10 , FQA19N20L , FQA20N40 , FQA22P10 , FQA24N50F109 , FQA24N50F , 60N06 , FQA28N50F109 , FQA28N50F , FQA33N10 , FQA33N10L , FQA34N20 , FQA34N20L , FQA34N25 , FQA35N40 .

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