FQB7N10LTM. Аналоги и основные параметры
Наименование производителя: FQB7N10LTM
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 40 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 7.3 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 100 ns
Cossⓘ - Выходная емкость: 55 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.35 Ohm
Тип корпуса: D2-PAK
Аналог (замена) для FQB7N10LTM
- подборⓘ MOSFET транзистора по параметрам
FQB7N10LTM даташит
fqb7n10ltm fqi7n10ltu.pdf
December 2000 TM QFET QFET QFET QFET FQB7N10L / FQI7N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.3A, 100V, RDS(on) = 0.35 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.6 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced
fqb7n65ctm.pdf
October 2008 QFET FQB7N65C 650V N-Channel MOSFET Features Description 7A, 650V, RDS(on) = 1.4 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 28 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especially tailored to Fa
fqb7n30tm.pdf
April 2000 TM QFET QFET QFET QFET FQB7N30 / FQI7N30 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 7A, 300V, RDS(on) = 0.7 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 13 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has
fqb7n80tm am002 fqi7n80tu fqi7n80 fqb7n80.pdf
October 2008 QFET FQB7N80 / FQI7N80 800V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 6.6A, 800V, RDS(on) = 1.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 40 nC) planar stripe, DMOS technology. Low Crss ( typical 19 pF) This advanced technology has been especially
Другие IGBT... FQB6N40CTM, FQB6N50, FQB6N60CTM, FQB6N60TM, FQB6N70TM, FQB6N80TM, FQB6N90TMAM002, FQB70N10TMAM002, STP80NF70, FQB7N20LTM, FQB7N30TM, FQB7N60TM, FQB7N65CTM, FQB7N80TMAM002, FQB7P06TM, FQB85N06TMAM002, FQB8N25TM
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