FQB7N10LTM MOSFET Datasheet: N-Ch, 100V, 7.3A. Full specification with pinout and replacement list

FQB7N10LTM Specs and Replacement

   Type Designator: FQB7N10LTM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7.3 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
   Package: D2-PAK

FQB7N10LTM substitution

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FQB7N10LTM datasheet

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