FQD10N20TM Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: FQD10N20TM
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 51 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 7.6 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 90 ns
Cossⓘ - Выходная емкость: 95 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.36 Ohm
Тип корпуса: D-PAK
Аналог (замена) для FQD10N20TM
FQD10N20TM Datasheet (PDF)
fqd10n20tf fqd10n20tm fqu10n20tu.pdf

April 2000TMQFETQFETQFETQFETFQD10N20 / FQU10N20200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 7.6A, 200V, RDS(on) = 0.36 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13.5 nC)planar stripe, DMOS technology. Low Crss ( typical 13 pF)This advanced technol
fqd10n20ctf fqd10n20ctm fqu10n20ctu.pdf

July 2013FQD10N20C / FQU10N20C N-Channel QFET MOSFET200 V, 7.8 A, 360 mDescription FeaturesThis N-Channel enhancement mode power MOSFET is 7.8 A, 200 V, RDS(on) = 360 m (Max.)@ VGS = 10 V,produced using Fairchild Semiconductors proprietary ID = 3.9 Aplanar stripe and DMOS technology. This advanced Low Gate Charge (Typ. 20 nC)MOSFET technology has been espe
fqd10n20c fqu10n20c.pdf

January 2009QFETFQD10N20C / FQU10N20C200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.8A, 200V, RDS(on) = 0.36 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 20 nC)planar stripe, DMOS technology. Low Crss ( typical 40.5 pF)This advanced technology has been espe
fqd10n20ltf fqd10n20ltm fqu10n20ltu.pdf

December 2000TMQFETQFETQFETQFETFQD10N20L / FQU10N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.6A, 200V, RDS(on) = 0.36 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13 nC)planar stripe, DMOS technology. Low Crss ( typical 14 pF)This advanced
Другие MOSFET... FQB9N50CTM , FQB9N50TM , FQB9P25TM , FQD10N20CTF , FQD10N20CTM , FQD10N20LTF , FQD10N20LTM , FQD10N20TF , IRF730 , FQD11P06TF , FQD11P06TM , FQD12N20LTF , FQD12N20LTM , FQD12N20TF , FQD12N20TM , FQD12P10TF , FQD12P10TM .
History: 2SK1115 | 2SK3111-S | STF34N65M5 | 2SK3921-01S | DH020N03I | NTD65N03R-035
History: 2SK1115 | 2SK3111-S | STF34N65M5 | 2SK3921-01S | DH020N03I | NTD65N03R-035



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