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FQD10N20TM MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: FQD10N20TM

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 51 W

Предельно допустимое напряжение сток-исток |Uds|: 200 V

Предельно допустимое напряжение затвор-исток |Ugs|: 30 V

Пороговое напряжение включения |Ugs(th)|: 5 V

Максимально допустимый постоянный ток стока |Id|: 7.6 A

Максимальная температура канала (Tj): 150 °C

Общий заряд затвора (Qg): 13.5 nC

Время нарастания (tr): 90 ns

Выходная емкость (Cd): 95 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.36 Ohm

Тип корпуса: D-PAK

Аналог (замена) для FQD10N20TM

 

 

FQD10N20TM Datasheet (PDF)

0.1. fqd10n20tf fqd10n20tm fqu10n20tu.pdf Size:778K _fairchild_semi

FQD10N20TM
FQD10N20TM

April 2000TMQFETQFETQFETQFETFQD10N20 / FQU10N20200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 7.6A, 200V, RDS(on) = 0.36 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13.5 nC)planar stripe, DMOS technology. Low Crss ( typical 13 pF)This advanced technol

6.1. fqd10n20ctf fqd10n20ctm fqu10n20ctu.pdf Size:853K _fairchild_semi

FQD10N20TM
FQD10N20TM

July 2013FQD10N20C / FQU10N20C N-Channel QFET MOSFET200 V, 7.8 A, 360 mDescription FeaturesThis N-Channel enhancement mode power MOSFET is 7.8 A, 200 V, RDS(on) = 360 m (Max.)@ VGS = 10 V,produced using Fairchild Semiconductors proprietary ID = 3.9 Aplanar stripe and DMOS technology. This advanced Low Gate Charge (Typ. 20 nC)MOSFET technology has been espe

6.2. fqd10n20c fqu10n20c.pdf Size:723K _fairchild_semi

FQD10N20TM
FQD10N20TM

January 2009QFETFQD10N20C / FQU10N20C200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.8A, 200V, RDS(on) = 0.36 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 20 nC)planar stripe, DMOS technology. Low Crss ( typical 40.5 pF)This advanced technology has been espe

 6.3. fqd10n20ltf fqd10n20ltm fqu10n20ltu.pdf Size:574K _fairchild_semi

FQD10N20TM
FQD10N20TM

December 2000TMQFETQFETQFETQFETFQD10N20L / FQU10N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.6A, 200V, RDS(on) = 0.36 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13 nC)planar stripe, DMOS technology. Low Crss ( typical 14 pF)This advanced

6.4. fqd10n20l fqu10n20l.pdf Size:576K _fairchild_semi

FQD10N20TM
FQD10N20TM

December 2000TMQFETQFETQFETQFETFQD10N20L / FQU10N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.6A, 200V, RDS(on) = 0.36 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13 nC)planar stripe, DMOS technology. Low Crss ( typical 14 pF)This advanced

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