FQD10N20TM MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: FQD10N20TM
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 51 W
Предельно допустимое напряжение сток-исток |Uds|: 200 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 5 V
Максимально допустимый постоянный ток стока |Id|: 7.6 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 13.5 nC
Время нарастания (tr): 90 ns
Выходная емкость (Cd): 95 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.36 Ohm
Тип корпуса: D-PAK
Аналог (замена) для FQD10N20TM
FQD10N20TM Datasheet (PDF)
0.1. fqd10n20tf fqd10n20tm fqu10n20tu.pdf 
Size:778K _fairchild_semi
April 2000TMQFETQFETQFETQFETFQD10N20 / FQU10N20200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 7.6A, 200V, RDS(on) = 0.36 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13.5 nC)planar stripe, DMOS technology. Low Crss ( typical 13 pF)This advanced technol
6.1. fqd10n20ctf fqd10n20ctm fqu10n20ctu.pdf Size:853K _fairchild_semi
July 2013FQD10N20C / FQU10N20C N-Channel QFET MOSFET200 V, 7.8 A, 360 mDescription FeaturesThis N-Channel enhancement mode power MOSFET is 7.8 A, 200 V, RDS(on) = 360 m (Max.)@ VGS = 10 V,produced using Fairchild Semiconductors proprietary ID = 3.9 Aplanar stripe and DMOS technology. This advanced Low Gate Charge (Typ. 20 nC)MOSFET technology has been espe
6.2. fqd10n20c fqu10n20c.pdf Size:723K _fairchild_semi
January 2009QFETFQD10N20C / FQU10N20C200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.8A, 200V, RDS(on) = 0.36 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 20 nC)planar stripe, DMOS technology. Low Crss ( typical 40.5 pF)This advanced technology has been espe
6.3. fqd10n20ltf fqd10n20ltm fqu10n20ltu.pdf Size:574K _fairchild_semi
December 2000TMQFETQFETQFETQFETFQD10N20L / FQU10N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.6A, 200V, RDS(on) = 0.36 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13 nC)planar stripe, DMOS technology. Low Crss ( typical 14 pF)This advanced
6.4. fqd10n20l fqu10n20l.pdf Size:576K _fairchild_semi
December 2000TMQFETQFETQFETQFETFQD10N20L / FQU10N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.6A, 200V, RDS(on) = 0.36 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13 nC)planar stripe, DMOS technology. Low Crss ( typical 14 pF)This advanced
Другие MOSFET... CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .
Список транзисторов
Обновления
MOSFET: IPB17N25S3-100 | IPB160N04S4L-H1 | IPB140N08S4-04 | IPB120P04P4-04 | IPB120N08S4-04 | IPB120N08S4-03 | IPB120N04S4L-02 | IPB120N04S4-04 | IPB120N03S4L-03 | IPB110P06LM | IPB060N15N5 | IPB032N10N5 | IPB024N10N5 | IPB019N08N5 | IPB017N10N5LF | IPAW70R950CE