All MOSFET. FQD10N20TM Datasheet

 

FQD10N20TM MOSFET. Datasheet pdf. Equivalent


   Type Designator: FQD10N20TM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 51 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 7.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 13.5 nC
   trⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
   Package: D-PAK

 FQD10N20TM Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQD10N20TM Datasheet (PDF)

 ..1. Size:778K  fairchild semi
 fqd10n20tf fqd10n20tm fqu10n20tu.pdf

FQD10N20TM FQD10N20TM

April 2000TMQFETQFETQFETQFETFQD10N20 / FQU10N20200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 7.6A, 200V, RDS(on) = 0.36 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13.5 nC)planar stripe, DMOS technology. Low Crss ( typical 13 pF)This advanced technol

 6.1. Size:853K  fairchild semi
 fqd10n20ctf fqd10n20ctm fqu10n20ctu.pdf

FQD10N20TM FQD10N20TM

July 2013FQD10N20C / FQU10N20C N-Channel QFET MOSFET200 V, 7.8 A, 360 mDescription FeaturesThis N-Channel enhancement mode power MOSFET is 7.8 A, 200 V, RDS(on) = 360 m (Max.)@ VGS = 10 V,produced using Fairchild Semiconductors proprietary ID = 3.9 Aplanar stripe and DMOS technology. This advanced Low Gate Charge (Typ. 20 nC)MOSFET technology has been espe

 6.2. Size:723K  fairchild semi
 fqd10n20c fqu10n20c.pdf

FQD10N20TM FQD10N20TM

January 2009QFETFQD10N20C / FQU10N20C200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.8A, 200V, RDS(on) = 0.36 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 20 nC)planar stripe, DMOS technology. Low Crss ( typical 40.5 pF)This advanced technology has been espe

 6.3. Size:574K  fairchild semi
 fqd10n20ltf fqd10n20ltm fqu10n20ltu.pdf

FQD10N20TM FQD10N20TM

December 2000TMQFETQFETQFETQFETFQD10N20L / FQU10N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.6A, 200V, RDS(on) = 0.36 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13 nC)planar stripe, DMOS technology. Low Crss ( typical 14 pF)This advanced

 6.4. Size:576K  fairchild semi
 fqd10n20l fqu10n20l.pdf

FQD10N20TM FQD10N20TM

December 2000TMQFETQFETQFETQFETFQD10N20L / FQU10N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.6A, 200V, RDS(on) = 0.36 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13 nC)planar stripe, DMOS technology. Low Crss ( typical 14 pF)This advanced

 6.5. Size:902K  onsemi
 fqd10n20l.pdf

FQD10N20TM FQD10N20TM

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 6.6. Size:651K  onsemi
 fqd10n20c fqu10n20c.pdf

FQD10N20TM FQD10N20TM

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 6.7. Size:906K  cn vbsemi
 fqd10n20l.pdf

FQD10N20TM FQD10N20TM

FQD10N20Lwww.VBsemi.twN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature2000.245 at VGS = 10 V 10 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATIN

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: 2SK3339-01

 

 
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