All MOSFET. FQD10N20TM Datasheet

 

FQD10N20TM MOSFET. Datasheet pdf. Equivalent

Type Designator: FQD10N20TM

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 51 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 7.6 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 13.5 nC

Rise Time (tr): 90 nS

Drain-Source Capacitance (Cd): 95 pF

Maximum Drain-Source On-State Resistance (Rds): 0.36 Ohm

Package: D-PAK

FQD10N20TM Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQD10N20TM Datasheet (PDF)

0.1. fqd10n20tf fqd10n20tm fqu10n20tu.pdf Size:778K _fairchild_semi

FQD10N20TM
FQD10N20TM

April 2000 TM QFET QFET QFET QFET FQD10N20 / FQU10N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 7.6A, 200V, RDS(on) = 0.36Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 13.5 nC) planar stripe, DMOS technology. • Low Crss ( typical 13 pF) This advanced technol

6.1. fqd10n20ctf fqd10n20ctm fqu10n20ctu.pdf Size:853K _fairchild_semi

FQD10N20TM
FQD10N20TM

July 2013 FQD10N20C / FQU10N20C N-Channel QFET® MOSFET 200 V, 7.8 A, 360 mΩ Description Features This N-Channel enhancement mode power MOSFET is • 7.8 A, 200 V, RDS(on) = 360 mΩ (Max.)@ VGS = 10 V, produced using Fairchild Semiconductor®’s proprietary ID = 3.9 A planar stripe and DMOS technology. This advanced • Low Gate Charge (Typ. 20 nC) MOSFET technology has been espe

6.2. fqd10n20c fqu10n20c.pdf Size:723K _fairchild_semi

FQD10N20TM
FQD10N20TM

January 2009 QFET® FQD10N20C / FQU10N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 7.8A, 200V, RDS(on) = 0.36Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 20 nC) planar stripe, DMOS technology. • Low Crss ( typical 40.5 pF) This advanced technology has been espe

 6.3. fqd10n20ltf fqd10n20ltm fqu10n20ltu.pdf Size:574K _fairchild_semi

FQD10N20TM
FQD10N20TM

December 2000 TM QFET QFET QFET QFET FQD10N20L / FQU10N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 7.6A, 200V, RDS(on) = 0.36Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 13 nC) planar stripe, DMOS technology. • Low Crss ( typical 14 pF) This advanced

6.4. fqd10n20l fqu10n20l.pdf Size:576K _fairchild_semi

FQD10N20TM
FQD10N20TM

December 2000 TM QFET QFET QFET QFET FQD10N20L / FQU10N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 7.6A, 200V, RDS(on) = 0.36Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 13 nC) planar stripe, DMOS technology. • Low Crss ( typical 14 pF) This advanced

Datasheet: FQB9N50CTM , FQB9N50TM , FQB9P25TM , FQD10N20CTF , FQD10N20CTM , FQD10N20LTF , FQD10N20LTM , FQD10N20TF , 40673 , FQD11P06TF , FQD11P06TM , FQD12N20LTF , FQD12N20LTM , FQD12N20TF , FQD12N20TM , FQD12P10TF , FQD12P10TM .

 

 
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