FQD10N20TM Specs and Replacement
Type Designator: FQD10N20TM
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 51 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 90 nS
Cossⓘ - Output Capacitance: 95 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
Package: D-PAK
FQD10N20TM substitution
FQD10N20TM Specs
fqd10n20tf fqd10n20tm fqu10n20tu.pdf
April 2000 TM QFET QFET QFET QFET FQD10N20 / FQU10N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 7.6A, 200V, RDS(on) = 0.36 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 13.5 nC) planar stripe, DMOS technology. Low Crss ( typical 13 pF) This advanced technol... See More ⇒
fqd10n20ctf fqd10n20ctm fqu10n20ctu.pdf
July 2013 FQD10N20C / FQU10N20C N-Channel QFET MOSFET 200 V, 7.8 A, 360 m Description Features This N-Channel enhancement mode power MOSFET is 7.8 A, 200 V, RDS(on) = 360 m (Max.)@ VGS = 10 V, produced using Fairchild Semiconductor s proprietary ID = 3.9 A planar stripe and DMOS technology. This advanced Low Gate Charge (Typ. 20 nC) MOSFET technology has been espe... See More ⇒
fqd10n20c fqu10n20c.pdf
January 2009 QFET FQD10N20C / FQU10N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.8A, 200V, RDS(on) = 0.36 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 20 nC) planar stripe, DMOS technology. Low Crss ( typical 40.5 pF) This advanced technology has been espe... See More ⇒
fqd10n20ltf fqd10n20ltm fqu10n20ltu.pdf
December 2000 TM QFET QFET QFET QFET FQD10N20L / FQU10N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.6A, 200V, RDS(on) = 0.36 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 13 nC) planar stripe, DMOS technology. Low Crss ( typical 14 pF) This advanced... See More ⇒
Detailed specifications: FQB9N50CTM , FQB9N50TM , FQB9P25TM , FQD10N20CTF , FQD10N20CTM , FQD10N20LTF , FQD10N20LTM , FQD10N20TF , IRFB31N20D , FQD11P06TF , FQD11P06TM , FQD12N20LTF , FQD12N20LTM , FQD12N20TF , FQD12N20TM , FQD12P10TF , FQD12P10TM .
Keywords - FQD10N20TM MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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