IRF2804PBF - описание и поиск аналогов

 ..1. Size:408K  international rectifier
 irf2804pbf irf2804spbf irf2804lpbf.pdf 

PD - 95332B IRF2804PbF IRF2804SPbF IRF2804LPbF Features l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance D l 175 C Operating Temperature VDSS = 40V l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 2.0m l Lead-Free G ID = 75A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve e

 ..2. Size:408K  international rectifier
 irf2804lpbf irf2804pbf irf2804spbf.pdf 

PD - 95332B IRF2804PbF IRF2804SPbF IRF2804LPbF Features l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance D l 175 C Operating Temperature VDSS = 40V l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 2.0m l Lead-Free G ID = 75A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve e

 7.1. Size:214K  international rectifier
 auirf2804wl.pdf 

PD - 97739 AUTOMOTIVE GRADE AUIRF2804WL HEXFET Power MOSFET Features D V(BR)DSS l Advanced Process Technology 40V l Ultra Low On-Resistance RDS(on) max. 1.8m l 175 C Operating Temperature G l Fast Switching ID (Silicon Limited) 295A l Repetitive Avalanche Allowed up to Tjmax S ID (Package Limited) 240A l Lead-Free, RoHS Compliant l Automotive Qualified * Description

 7.2. Size:569K  international rectifier
 irf2804.pdf 

PD - 94436B AUTOMOTIVE MOSFET IRF2804 HEXFET Power MOSFET Features D Advanced Process Technology VDSS = 40V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) = 2.3m Fast Switching G Repetitive Avalanche Allowed up to Tjmax ID = 75A S Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest

 7.3. Size:281K  international rectifier
 auirf2804strr.pdf 

AUTOMOTIVE GRADE PD -96290A AUIRF2804 AUIRF2804S AUIRF2804L Features HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance V(BR)DSS 40V D l 175 C Operating Temperature RDS(on) typ. 1.5m l Fast Switching l Repetitive Avalanche Allowed up to Tjmax max. 2.0m G l Lead-Free, RoHS Compliant ID (Silicon Limited) 270A l Automotive Qualified * S ID

 7.4. Size:280K  international rectifier
 irf2804s-7ppbf.pdf 

PD - 97057A IRF2804S-7PPbF Features l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance D l 175 C Operating Temperature l Fast Switching VDSS = 40V l Repetitive Avalanche Allowed up to Tjmax l Lead-Free G RDS(on) = 1.6m Description S This HEXFET Power MOSFET utilizes the latest ID = 160A S (Pin 2, 3 ,5,6,7) processing techniques to achieve extr

 7.5. Size:750K  infineon
 auirf2804 auirf2804s auirf2804l.pdf 

AUIRF2804 AUIRF2804S AUTOMOTIVE GRADE AUIRF2804L Features VDSS 40V Advanced Process Technology RDS(on) typ. 1.5m Ultra Low On-Resistance max. 2.0m 175 C Operating Temperature ID (Silicon Limited) 270A Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 195A Lead-Free, RoHS Compliant Aut

 7.6. Size:355K  infineon
 auirf2804s-7p.pdf 

AUIRF2804S-7P AUTOMOTIVE GRADE Features HEXFET Power MOSFET Advanced Process Technology VDSS 40V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) max. 1.6m Fast Switching ID (Silicon Limited) 320A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ID (Package Limited) 240A Automotive Qualified * Desc

 7.7. Size:246K  inchange semiconductor
 irf2804.pdf 

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF2804 IIRF2804 FEATURES Static drain-source on-resistance RDS(on) 2.0m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM R

 7.8. Size:270K  inchange semiconductor
 irf2804s.pdf 

isc N-Channel MOSFET Transistor IRF2804S DESCRIPTION Static drain-source on-resistance RDS(on) 6m @V = 10V GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS . Provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. ABSOLUTE MAXIMUM RATINGS(