All MOSFET. IRF2804PBF Datasheet

 

IRF2804PBF Datasheet and Replacement


   Type Designator: IRF2804PBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 120 nS
   Cossⓘ - Output Capacitance: 1690 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0023 Ohm
   Package: TO-220AB
 

 IRF2804PBF substitution

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IRF2804PBF Datasheet (PDF)

 ..1. Size:408K  international rectifier
irf2804pbf irf2804spbf irf2804lpbf.pdf pdf_icon

IRF2804PBF

PD - 95332BIRF2804PbFIRF2804SPbFIRF2804LPbFFeaturesl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-ResistanceDl 175C Operating TemperatureVDSS = 40Vl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 2.0ml Lead-FreeGID = 75ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve e

 ..2. Size:408K  international rectifier
irf2804lpbf irf2804pbf irf2804spbf.pdf pdf_icon

IRF2804PBF

PD - 95332BIRF2804PbFIRF2804SPbFIRF2804LPbFFeaturesl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-ResistanceDl 175C Operating TemperatureVDSS = 40Vl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 2.0ml Lead-FreeGID = 75ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve e

 7.1. Size:214K  international rectifier
auirf2804wl.pdf pdf_icon

IRF2804PBF

PD - 97739AUTOMOTIVE GRADEAUIRF2804WLHEXFET Power MOSFETFeaturesDV(BR)DSSl Advanced Process Technology 40Vl Ultra Low On-ResistanceRDS(on) max.1.8ml 175C Operating TemperatureGl Fast Switching ID (Silicon Limited)295Al Repetitive Avalanche Allowed up to TjmaxSID (Package Limited)240Al Lead-Free, RoHS Compliantl Automotive Qualified *Description

 7.2. Size:569K  international rectifier
irf2804.pdf pdf_icon

IRF2804PBF

PD - 94436BAUTOMOTIVE MOSFETIRF2804HEXFET Power MOSFETFeaturesD Advanced Process TechnologyVDSS = 40V Ultra Low On-Resistance 175C Operating TemperatureRDS(on) = 2.3m Fast SwitchingG Repetitive Avalanche Allowed up to TjmaxID = 75ASDescriptionSpecifically designed for Automotive applications, this HEXFET PowerMOSFET utilizes the latest

Datasheet: FQD6N40CTM , FQD6N40TF , FQD6N40TM , IRF2204LPBF , IRF2204PBF , IRF2204SPBF , IRF22N60C , IRF2804LPBF , 2N7002 , IRF2804S-7PPBF , IRF2804SPBF , IRF2805LPBF , IRF2805PBF , IRF2805SPBF , IRF2807PBF , IRF2807SPBF , IRF2807LPBF .

History: SQS464EEN | FIR5N65FG

Keywords - IRF2804PBF MOSFET datasheet

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