IRFY120 - описание и поиск аналогов

IRFY120 MECHANICAL DATA Dimensions in mm (inches) N CHANNEL POWER MOSFET 4.70 5.00 10.41 FOR HI REL 0.70 10.67 0.90 APPLICATIONS 3.56Dia. 3.81 VDSS 100V ID(cont) 7.3A 1 2 3 RDS(on) 0.31 FEATURES 0.89 1.14 HERMETICALLY SEALED TO 220 METAL 2.54 2.65 BSC 2.75 PACKAGE SIMPLE DRIVE REQUIREMENTS TO 220M Metal Package LIGHTWEIGHT Pad 1 Ga

IRFY120C Dimensions in mm (inches). N-Channel MOSFET in 10.6 (0.42) 4.6 (0.18) 0.8 a Hermetically sealed (0.03) TO257AB Metal Package. 3.70 Dia. Nom 1 2 3 VDSS = 100V ID = 4.5A RDS(ON) = 0.3 All Semelab hermetically sealed products can be 1.0 processed in accordance with the requirements 2.54 (0.1) (0.039) BSC 2.70 of BS, CECC and JAN, JANTX, J

PD - 94167A HEXFET POWER MOSFET IRFY11N50CMA THRU-HOLE (TO-257AA) 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFY11N50CMA 500V 0.56 10A Fifth Generation HEXFET power MOSFETs from TO-257AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Feature

PD - 91286D IRFY130C,IRFY130CM POWER MOSFET 100V, N-CHANNEL THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY130C 0.18 14.4A Ceramic IRFY130CM 0.18 14.4A Ceramic HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The TO-257AA efficient geometry design achieves ve

PD - 91287C IRFY140C,IRFY140CM POWER MOSFET 100V, N-CHANNEL THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY140C 0.077 16*A Ceramic IRFY140CM 0.077 16*A Ceramic HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The TO-257AA efficient geometry design achieves ve

PD - 94185 IRFY140,IRFY140M POWER MOSFET 100V, N-CHANNEL THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY140 0.077 16*A Glass IRFY140M 0.077 16*A Glass HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The TO-257AA efficient geometry design achieves very low on

PD - 94183 IRFY130,IRFY130M POWER MOSFET 100V, N-CHANNEL THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY130 0.18 14.4A Glass IRFY130M 0.18 14.4A Glass HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The TO-257AA efficient geometry design achieves very low on

PD - 94183 IRFY130,IRFY130M POWER MOSFET 100V, N-CHANNEL THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY130 0.18 14.4A Glass IRFY130M 0.18 14.4A Glass HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The TO-257AA efficient geometry design achieves very low on

PD - 91286D IRFY130C,IRFY130CM POWER MOSFET 100V, N-CHANNEL THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY130C 0.18 14.4A Ceramic IRFY130CM 0.18 14.4A Ceramic HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The TO-257AA efficient geometry design achieves ve

PD - 91287C IRFY140C,IRFY140CM POWER MOSFET 100V, N-CHANNEL THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY140C 0.077 16*A Ceramic IRFY140CM 0.077 16*A Ceramic HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The TO-257AA efficient geometry design achieves ve

PD - 94185 IRFY140,IRFY140M POWER MOSFET 100V, N-CHANNEL THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY140 0.077 16*A Glass IRFY140M 0.077 16*A Glass HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The TO-257AA efficient geometry design achieves very low on

IRFY110C Dimensions in mm (inches). N-Channel MOSFET in 10.6 (0.42) 4.6 (0.18) 0.8 a Hermetically sealed (0.03) TO257AB Metal Package. 3.70 Dia. Nom 1 2 3 VDSS = 100V ID = 3.5A RDS(ON) = 0.69 All Semelab hermetically sealed products can be 1.0 processed in accordance with the requirements 2.54 (0.1) (0.039) BSC 2.70 of BS, CECC and JAN, JANTX,

IRFY110 Dimensions in mm (inches). N-Channel MOSFET in 10.6 (0.42) 4.6 (0.18) 0.8 a Hermetically sealed (0.03) TO257AB Metal Package. 3.70 Dia. Nom 1 2 3 VDSS = 100V ID = 3.5A RDS(ON) = 0.69 All Semelab hermetically sealed products can be 1.0 processed in accordance with the requirements 2.54 (0.1) (0.039) BSC 2.70 of BS, CECC and JAN, JANTX, J

IRFY140-T257 MECHANICAL DATA Dimensions in mm (inches) N CHANNEL POWER MOSFET 4.83 (0.190) 5.08 (0.200) 10.41 (0.410) 10.67 (0.420) 0.89 (0.035) 1.14 (0.045) FOR HI REL APPLICATIONS 3.56 (0.140) Dia. 3.81 (0.150) VDSS 100V 1 2 3 ID(cont) 18A RDS(on) 0.092 0.64 (0.025) Dia. 0.89 (0.035) FEATURES 2.54 (0.100) 3.05 (0.120) BSC BSC HERMETICALLY SEALED TO257AA