IRFY120 Datasheet. Specs and Replacement

Type Designator: IRFY120  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 70 max nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.31 Ohm

Package: TO220M

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IRFY120 datasheet

 ..1. Size:14K  1
irfy120.pdf pdf_icon

IRFY120

IRFY120 MECHANICAL DATA Dimensions in mm (inches) N CHANNEL POWER MOSFET 4.70 5.00 10.41 FOR HI REL 0.70 10.67 0.90 APPLICATIONS 3.56Dia. 3.81 VDSS 100V ID(cont) 7.3A 1 2 3 RDS(on) 0.31 FEATURES 0.89 1.14 HERMETICALLY SEALED TO 220 METAL 2.54 2.65 BSC 2.75 PACKAGE SIMPLE DRIVE REQUIREMENTS TO 220M Metal Package LIGHTWEIGHT Pad 1 Ga... See More ⇒

 0.1. Size:11K  1
irfy120c.pdf pdf_icon

IRFY120

IRFY120C Dimensions in mm (inches). N-Channel MOSFET in 10.6 (0.42) 4.6 (0.18) 0.8 a Hermetically sealed (0.03) TO257AB Metal Package. 3.70 Dia. Nom 1 2 3 VDSS = 100V ID = 4.5A RDS(ON) = 0.3 All Semelab hermetically sealed products can be 1.0 processed in accordance with the requirements 2.54 (0.1) (0.039) BSC 2.70 of BS, CECC and JAN, JANTX, J... See More ⇒

 9.1. Size:104K  international rectifier
irfy11n50cma.pdf pdf_icon

IRFY120

PD - 94167A HEXFET POWER MOSFET IRFY11N50CMA THRU-HOLE (TO-257AA) 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFY11N50CMA 500V 0.56 10A Fifth Generation HEXFET power MOSFETs from TO-257AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Feature... See More ⇒

 9.2. Size:164K  international rectifier
irfy130c.pdf pdf_icon

IRFY120

PD - 91286D IRFY130C,IRFY130CM POWER MOSFET 100V, N-CHANNEL THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY130C 0.18 14.4A Ceramic IRFY130CM 0.18 14.4A Ceramic HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The TO-257AA efficient geometry design achieves ve... See More ⇒

Detailed specifications: IRFW830A, IRFW840A, IRFWZ14A, IRFWZ24A, IRFWZ34A, IRFWZ44A, IRFY044, IRFY044C, 20N50, IRFY120C, IRFY130, IRFY130C, IRFY140, IRFY140C, IRFY240, IRFY240C, IRFY340

Keywords - IRFY120 MOSFET specs

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