Справочник MOSFET. FQI19N20TU

 

FQI19N20TU Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FQI19N20TU
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 140 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 19.4 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 190 ns
   Cossⓘ - Выходная емкость: 220 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.15 Ohm
   Тип корпуса: I2-PAK
 

 Аналог (замена) для FQI19N20TU

   - подбор ⓘ MOSFET транзистора по параметрам

 

FQI19N20TU Datasheet (PDF)

 ..1. Size:831K  fairchild semi
 fqb19n20tm fqb19n20 fqi19n20 fqi19n20tu.pdf pdf_icon

FQI19N20TU

October 2008QFETFQB19N20 / FQI19N20200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 19.4A, 200V, RDS(on) = 0.15 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been espec

 6.1. Size:839K  fairchild semi
 fqb19n20ltm fqb19n20l fqi19n20l.pdf pdf_icon

FQI19N20TU

October 2008QFETFQB19N20L / FQI19N20L200V LOGIC N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 21A, 200V, RDS(on) = 0.14 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 27 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been

 6.2. Size:1167K  fairchild semi
 fqb19n20ctm fqb19n20c fqi19n20c fqi19n20ctu.pdf pdf_icon

FQI19N20TU

October 2008QFETFQB19N20C/FQI19N20C200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 19.0A, 200V, RDS(on) = 0.17 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 40.5 nC)planar stripe, DMOS technology. Low Crss ( typical 85 pF)This advanced technology has been espec

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History: NCE55P15 | RQ6E050AT | IXFV26N50P | CTZ2302A | 2SK3365 | OSG60R092HT3ZF | APT40M70B2VFRG

 

 
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