FQI19N20TU MOSFET. Datasheet pdf. Equivalent
Type Designator: FQI19N20TU
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 140 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 19.4 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 31 nC
Rise Time (tr): 190 nS
Drain-Source Capacitance (Cd): 220 pF
Maximum Drain-Source On-State Resistance (Rds): 0.15 Ohm
Package: I2-PAK
FQI19N20TU Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQI19N20TU Datasheet (PDF)
1.1. fqi19n20tu.pdf 
Size:831K _fairchild_semi
October 2008 QFET® FQB19N20 / FQI19N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 19.4A, 200V, RDS(on) = 0.15Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 31 nC) planar stripe, DMOS technology. • Low Crss ( typical 30 pF) This advanced technology has been espec
2.1. fqb19n20l fqi19n20l.pdf Size:839K _fairchild_semi
October 2008 QFET FQB19N20L / FQI19N20L 200V LOGIC N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 21A, 200V, RDS(on) = 0.14? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 27 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has been especially tai
2.2. fqb19n20 fqi19n20.pdf Size:831K _fairchild_semi
October 2008 QFET FQB19N20 / FQI19N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 19.4A, 200V, RDS(on) = 0.15? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has been especially tailored
2.3. fqi19n20ctu.pdf Size:1167K _fairchild_semi
October 2008 QFET® FQB19N20C/FQI19N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 19.0A, 200V, RDS(on) = 0.17Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 40.5 nC) planar stripe, DMOS technology. • Low Crss ( typical 85 pF) This advanced technology has been espec
2.4. fqb19n20c fqi19n20c.pdf Size:1167K _fairchild_semi
October 2008 QFET FQB19N20C/FQI19N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 19.0A, 200V, RDS(on) = 0.17? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 40.5 nC) planar stripe, DMOS technology. Low Crss ( typical 85 pF) This advanced technology has been especially tailored
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
