All MOSFET. FQI19N20TU Datasheet

 

FQI19N20TU MOSFET. Datasheet pdf. Equivalent

Type Designator: FQI19N20TU

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 140 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 19.4 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 31 nC

Rise Time (tr): 190 nS

Drain-Source Capacitance (Cd): 220 pF

Maximum Drain-Source On-State Resistance (Rds): 0.15 Ohm

Package: I2-PAK

FQI19N20TU Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQI19N20TU Datasheet (PDF)

1.1. fqi19n20tu.pdf Size:831K _fairchild_semi

FQI19N20TU
FQI19N20TU

October 2008 QFET® FQB19N20 / FQI19N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 19.4A, 200V, RDS(on) = 0.15Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 31 nC) planar stripe, DMOS technology. • Low Crss ( typical 30 pF) This advanced technology has been espec

2.1. fqb19n20l fqi19n20l.pdf Size:839K _fairchild_semi

FQI19N20TU
FQI19N20TU

October 2008 QFET FQB19N20L / FQI19N20L 200V LOGIC N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 21A, 200V, RDS(on) = 0.14? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 27 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has been especially tai

2.2. fqb19n20 fqi19n20.pdf Size:831K _fairchild_semi

FQI19N20TU
FQI19N20TU

October 2008 QFET FQB19N20 / FQI19N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 19.4A, 200V, RDS(on) = 0.15? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has been especially tailored

 2.3. fqi19n20ctu.pdf Size:1167K _fairchild_semi

FQI19N20TU
FQI19N20TU

October 2008 QFET® FQB19N20C/FQI19N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 19.0A, 200V, RDS(on) = 0.17Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 40.5 nC) planar stripe, DMOS technology. • Low Crss ( typical 85 pF) This advanced technology has been espec

2.4. fqb19n20c fqi19n20c.pdf Size:1167K _fairchild_semi

FQI19N20TU
FQI19N20TU

October 2008 QFET FQB19N20C/FQI19N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 19.0A, 200V, RDS(on) = 0.17? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 40.5 nC) planar stripe, DMOS technology. Low Crss ( typical 85 pF) This advanced technology has been especially tailored

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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