FQI5N40TU. Аналоги и основные параметры

Наименование производителя: FQI5N40TU

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 70 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 400 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 4.5 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 60 ns

Cossⓘ - Выходная емкость: 60 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.6 Ohm

Тип корпуса: I2-PAK

Аналог (замена) для FQI5N40TU

- подборⓘ MOSFET транзистора по параметрам

 

FQI5N40TU даташит

 ..1. Size:711K  fairchild semi
 fqb5n40tm fqi5n40tu.pdf pdf_icon

FQI5N40TU

April 2000 TM QFET QFET QFET QFET FQB5N40 / FQI5N40 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 4.5A, 400V, RDS(on) = 1.6 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 10 nC) planar stripe, DMOS technology. Low Crss ( typical 7.0 pF) This advanced technology

 9.1. Size:655K  fairchild semi
 fqb5n60ctm fqb5n60c fqi5n60c fqi5n60ctu.pdf pdf_icon

FQI5N40TU

TM QFET FQB5N60C / FQI5N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.5A, 600V, RDS(on) = 2.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 15 nC) planar stripe, DMOS technology. Low Crss ( typical 6.5 pF) This advanced technology has been especially tailored

 9.2. Size:553K  fairchild semi
 fqb5n60 fqi5n60.pdf pdf_icon

FQI5N40TU

April 2000 TM QFET QFET QFET QFET FQB5N60 / FQI5N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.0A, 600V, RDS(on) = 2.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 16 nC) planar stripe, DMOS technology. Low Crss ( typical 9.0 pF) This advanced technology h

 9.3. Size:945K  fairchild semi
 fqb5n50ctm fqb5n50c fqi5n50c fqi5n50ctu.pdf pdf_icon

FQI5N40TU

October 2008 QFET FQB5N50C/FQI5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5A, 500V, RDS(on) = 1.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 18nC) planar stripe, DMOS technology. Low Crss ( typical 15pF) This advanced technology has been especially tai

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