FQI5N40TU MOSFET PDF: N-Ch, 400V, 4.5A. Full specification with pinout and replacement list

..1. Size:711K fairchild semi
fqb5n40tm fqi5n40tu.pdf pdf_icon

April 2000 TM QFET QFET QFET QFET FQB5N40 / FQI5N40 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 4.5A, 400V, RDS(on) = 1.6 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 10 nC) planar stripe, DMOS technology. Low Crss ( typical 7.0 pF) This advanced technology... See More ⇒

9.1. Size:655K fairchild semi
fqb5n60ctm fqb5n60c fqi5n60c fqi5n60ctu.pdf pdf_icon

TM QFET FQB5N60C / FQI5N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.5A, 600V, RDS(on) = 2.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 15 nC) planar stripe, DMOS technology. Low Crss ( typical 6.5 pF) This advanced technology has been especially tailored ... See More ⇒

9.2. Size:553K fairchild semi
fqb5n60 fqi5n60.pdf pdf_icon

April 2000 TM QFET QFET QFET QFET FQB5N60 / FQI5N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.0A, 600V, RDS(on) = 2.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 16 nC) planar stripe, DMOS technology. Low Crss ( typical 9.0 pF) This advanced technology h... See More ⇒

9.3. Size:945K fairchild semi
fqb5n50ctm fqb5n50c fqi5n50c fqi5n50ctu.pdf pdf_icon

October 2008 QFET FQB5N50C/FQI5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5A, 500V, RDS(on) = 1.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 18nC) planar stripe, DMOS technology. Low Crss ( typical 15pF) This advanced technology has been especially tai... See More ⇒

9.4. Size:539K fairchild semi
fqb5n20l fqi5n20l.pdf pdf_icon

December 2000 TM QFET QFET QFET QFET FQB5N20L / FQI5N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.5A, 200V, RDS(on) = 1.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.8 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced ... See More ⇒

9.5. Size:700K fairchild semi
fqb5n20tm fqi5n20tu.pdf pdf_icon

April 2000 TM QFET QFET QFET QFET FQB5N20 / FQI5N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 4.5A, 200V, RDS(on) = 1.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced technology... See More ⇒

9.6. Size:765K fairchild semi
fqb5n30tm fqi5n30tu.pdf pdf_icon

May 2000 TM QFET QFET QFET QFET FQB5N30 / FQI5N30 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 5.4A, 300V, RDS(on) = 0.9 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 9.8 nC) planar stripe, DMOS technology. Low Crss ( typical 9.5 pF) This advanced technology h... See More ⇒

9.7. Size:760K fairchild semi
fqb5n15tm fqi5n15tu.pdf pdf_icon

May 2000 TM QFET QFET QFET QFET 150V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 5.4A, 150V, RDS(on) = 0.8 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 5.4 nC) planar stripe, DMOS technology. Low Crss ( typical 7.5 pF) This advanced technology h... See More ⇒

9.8. Size:1072K fairchild semi
fqb5n90 fqi5n90.pdf pdf_icon

October 2008 QFET FQB5N90 / FQI5N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.4A, 900V, RDS(on) = 2.3 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 13 pF) This advanced technology has been especiall... See More ⇒

9.9. Size:538K fairchild semi
fqb5n20ltm fqi5n20ltu.pdf pdf_icon

December 2000 TM QFET QFET QFET QFET FQB5N20L / FQI5N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.5A, 200V, RDS(on) = 1.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.8 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced ... See More ⇒

9.10. Size:670K fairchild semi
fqi5n80tu.pdf pdf_icon

September 2000 TM QFET FQB5N80 / FQI5N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.8A, 800V, RDS(on) = 2.6 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 25 nC) planar stripe, DMOS technology. Low Crss ( typical 11 pF) This advanced technology has been especia... See More ⇒