FQI5N40TU Datasheet and Replacement
Type Designator: FQI5N40TU
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 70 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 60 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
Package: I2-PAK
FQI5N40TU substitution
FQI5N40TU Datasheet (PDF)
fqb5n40tm fqi5n40tu.pdf

April 2000TMQFETQFETQFETQFETFQB5N40 / FQI5N40400V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 4.5A, 400V, RDS(on) = 1.6 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC)planar stripe, DMOS technology. Low Crss ( typical 7.0 pF)This advanced technology
fqb5n60ctm fqb5n60c fqi5n60c fqi5n60ctu.pdf

TMQFETFQB5N60C / FQI5N60C600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.5A, 600V, RDS(on) = 2.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC)planar stripe, DMOS technology. Low Crss ( typical 6.5 pF)This advanced technology has been especially tailored
fqb5n60 fqi5n60.pdf

April 2000TMQFETQFETQFETQFETFQB5N60 / FQI5N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.0A, 600V, RDS(on) = 2.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 16 nC)planar stripe, DMOS technology. Low Crss ( typical 9.0 pF)This advanced technology h
fqb5n50ctm fqb5n50c fqi5n50c fqi5n50ctu.pdf

October 2008QFETFQB5N50C/FQI5N50C500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5A, 500V, RDS(on) = 1.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 18nC)planar stripe, DMOS technology. Low Crss ( typical 15pF)This advanced technology has been especially tai
Datasheet: FQI4N90TU , FQI4P40TU , FQI50N06LTU , FQI50N06TU , FQI5N15TU , FQI5N20LTU , FQI5N20TU , FQI5N30TU , 5N60 , FQI5N50CTU , FQI5N60CTU , FQI5N80TU , FQI5P10TU , FQI6N15TU , FQI6N40CTU , FQI6N50TU , FQI6N60CTU .
History: FDP085N10AF102 | STF28N60M2 | FDPF6N60ZUT | SWN7N65DA | NCEP3085EG | SI2369DS-T1 | BL15N50-P
Keywords - FQI5N40TU MOSFET datasheet
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History: FDP085N10AF102 | STF28N60M2 | FDPF6N60ZUT | SWN7N65DA | NCEP3085EG | SI2369DS-T1 | BL15N50-P



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