FQP11N40. Аналоги и основные параметры

Наименование производителя: FQP11N40

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 147 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 400 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 11.4 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 100 ns

Cossⓘ - Выходная емкость: 180 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.48 Ohm

Тип корпуса: TO-220

Аналог (замена) для FQP11N40

- подборⓘ MOSFET транзистора по параметрам

 

FQP11N40 даташит

 ..1. Size:699K  fairchild semi
 fqp11n40.pdf pdf_icon

FQP11N40

April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 11.4A, 400V, RDS(on) = 0.48 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 27 nC) planar stripe, DMOS technology. Low Crss ( typical 20 pF) This advanced technology has bee

 0.1. Size:1216K  fairchild semi
 fqp11n40c fqpf11n40c.pdf pdf_icon

FQP11N40

May 2008 QFET FQP11N40C/FQPF11N40C 400V N-Channel MOSFET Features Description 10.5 A, 400V, RDS(on) = 0.5 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 28 nC) DMOS technology. Low Crss ( typical 85pF) This advanced technology has been especially

 8.1. Size:1291K  fairchild semi
 fqp11n50cf fqp11n50cf fqpf11n50cf.pdf pdf_icon

FQP11N40

July 2005 TM FRFET FQP11N50CF/FQPF11N50CF 500V N-Channel MOSFET Features Description 11A, 500V, RDS(on) = 0.55 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low Gate Charge (typical 43 nC) DMOS technology. Low Crss (typical 20pF) This advanced technology has been especially tai

 9.1. Size:926K  fairchild semi
 fqp11p06.pdf pdf_icon

FQP11N40

November 2013 FQP11P06 P-Channel QFET MOSFET -60 V, -11.4 A, 175 m Description Features These P-Channel enhancement mode power field effect -11.4 A, -60 V, RDS(on) = 175 m (Max.) @ VGS = -10 V, transistors are produced using Fairchild s proprietary, ID = -5.7 A planar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 13 nC) technology has been especially ta

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... FQNL1N50BBU, FQNL1N50BTA, FQNL2N50BBU, FQNL2N50BTA, FQP10N20, FQP10N20CTSTU, FQP10N60, FQP10N60CF, AO3400A, FQP11N50CF, FQP12N60, FQP13N06, FQP16N15, FQP17N08, FQP17N08L, FQP18N20V2, FQP18N50V2