All MOSFET. FQP11N40 Datasheet

 

FQP11N40 MOSFET. Datasheet pdf. Equivalent

Type Designator: FQP11N40

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 147 W

Maximum Drain-Source Voltage |Vds|: 400 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 11.4 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 27 nC

Rise Time (tr): 100 nS

Drain-Source Capacitance (Cd): 180 pF

Maximum Drain-Source On-State Resistance (Rds): 0.48 Ohm

Package: TO-220

FQP11N40 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQP11N40 Datasheet (PDF)

1.1. fqp11n40.pdf Size:699K _fairchild_semi

FQP11N40
FQP11N40

April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 11.4A, 400V, RDS(on) = 0.48Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 27 nC) planar stripe, DMOS technology. • Low Crss ( typical 20 pF) This advanced technology has bee

1.2. fqp11n40c fqpf11n40c.pdf Size:1216K _fairchild_semi

FQP11N40
FQP11N40

May 2008 QFET FQP11N40C/FQPF11N40C 400V N-Channel MOSFET Features Description 10.5 A, 400V, RDS(on) = 0.5 ? @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 28 nC) DMOS technology. Low Crss ( typical 85pF) This advanced technology has been especially tailored to m

 4.1. fqp11n50cf.pdf Size:1291K _fairchild_semi

FQP11N40
FQP11N40

July 2005 TM FRFET FQP11N50CF/FQPF11N50CF 500V N-Channel MOSFET Features Description • 11A, 500V, RDS(on) = 0.55Ω @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, • Low Gate Charge (typical 43 nC) DMOS technology. • Low Crss (typical 20pF) This advanced technology has been especially tai

4.2. fqp11n50cf fqpf11n50cf.pdf Size:1291K _fairchild_semi

FQP11N40
FQP11N40

July 2005 TM FRFET FQP11N50CF/FQPF11N50CF 500V N-Channel MOSFET Features Description 11A, 500V, RDS(on) = 0.55? @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low Gate Charge (typical 43 nC) DMOS technology. Low Crss (typical 20pF) This advanced technology has been especially tailored to mini

Datasheet: CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , BUZ10 , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .

 

 
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