FQP11N40 Spec and Replacement
Type Designator: FQP11N40
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 147 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 11.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 180 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.48 Ohm
Package: TO-220
FQP11N40 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQP11N40 Specs
fqp11n40.pdf
April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 11.4A, 400V, RDS(on) = 0.48 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 27 nC) planar stripe, DMOS technology. Low Crss ( typical 20 pF) This advanced technology has bee... See More ⇒
fqp11n40c fqpf11n40c.pdf
May 2008 QFET FQP11N40C/FQPF11N40C 400V N-Channel MOSFET Features Description 10.5 A, 400V, RDS(on) = 0.5 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 28 nC) DMOS technology. Low Crss ( typical 85pF) This advanced technology has been especially... See More ⇒
fqp11n50cf fqp11n50cf fqpf11n50cf.pdf
July 2005 TM FRFET FQP11N50CF/FQPF11N50CF 500V N-Channel MOSFET Features Description 11A, 500V, RDS(on) = 0.55 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low Gate Charge (typical 43 nC) DMOS technology. Low Crss (typical 20pF) This advanced technology has been especially tai... See More ⇒
fqp11p06.pdf
November 2013 FQP11P06 P-Channel QFET MOSFET -60 V, -11.4 A, 175 m Description Features These P-Channel enhancement mode power field effect -11.4 A, -60 V, RDS(on) = 175 m (Max.) @ VGS = -10 V, transistors are produced using Fairchild s proprietary, ID = -5.7 A planar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 13 nC) technology has been especially ta... See More ⇒
Detailed specifications: FQNL1N50BBU , FQNL1N50BTA , FQNL2N50BBU , FQNL2N50BTA , FQP10N20 , FQP10N20CTSTU , FQP10N60 , FQP10N60CF , AO3400A , FQP11N50CF , FQP12N60 , FQP13N06 , FQP16N15 , FQP17N08 , FQP17N08L , FQP18N20V2 , FQP18N50V2 .
Keywords - FQP11N40 MOSFET specs
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