FQP19N10 - аналоги и даташиты транзистора

 

FQP19N10 - Даташиты. Аналоги. Основные параметры


   Наименование производителя: FQP19N10
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 75 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 19 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 150 ns
   Cossⓘ - Выходная емкость: 165 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.1 Ohm
   Тип корпуса: TO-220
 

 Аналог (замена) для FQP19N10

   - подбор ⓘ MOSFET транзистора по параметрам

 

FQP19N10 Datasheet (PDF)

 ..1. Size:591K  fairchild semi
 fqp19n10.pdf pdf_icon

FQP19N10

August 2000TMQFETQFETQFETQFETFQP19N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 19A, 100V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC)planar stripe, DMOS technology. Low Crss ( typical 32 pF)This advanced technology has been es

 0.1. Size:626K  fairchild semi
 fqp19n10l.pdf pdf_icon

FQP19N10

August 2000TMQFETQFETQFETQFETFQP19N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 19A, 100V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 14 nC)planar stripe, DMOS technology. Low Crss ( typical 35 pF)This advanced technology has

 8.1. Size:1168K  fairchild semi
 fqp19n20ctstu fqp19n20c fqpf19n20c fqpf19n20cydtu.pdf pdf_icon

FQP19N10

QFETFQP19N20C/FQPF19N20C200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 19.0A, 200V, RDS(on) = 0.17 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 40.5 nC)planar stripe, DMOS technology. Low Crss ( typical 85 pF)This advanced technology has been especially tailo

 8.2. Size:722K  fairchild semi
 fqp19n20l.pdf pdf_icon

FQP19N10

May 2000TMQFETQFETQFETQFET 200V LOGIC N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 21A, 200V, RDS(on) = 0.14 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 27 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has b

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Другие MOSFET... FQP11N50CF , FQP12N60 , FQP13N06 , FQP16N15 , FQP17N08 , FQP17N08L , FQP18N20V2 , FQP18N50V2 , IRF9640 , FQP19N10L , FQP19N20CTSTU , FQP19N20L , FQP1N50 , FQP1N60 , FQP1P50 , FQP20N06TSTU , FQP22P10 .

History: FQP18N20V2 | AOSD21311C | APT10050B2VR

 

 
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