All MOSFET. FQP19N10 Equivalents Search

 

FQP19N10 Spec and Replacement


   Type Designator: FQP19N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 19 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 150 nS
   Cossⓘ - Output Capacitance: 165 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: TO-220

 FQP19N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQP19N10 Specs

 ..1. Size:591K  fairchild semi
fqp19n10.pdf pdf_icon

FQP19N10

August 2000 TM QFET QFET QFET QFET FQP19N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 19A, 100V, RDS(on) = 0.1 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 19 nC) planar stripe, DMOS technology. Low Crss ( typical 32 pF) This advanced technology has been es... See More ⇒

 0.1. Size:626K  fairchild semi
fqp19n10l.pdf pdf_icon

FQP19N10

August 2000 TM QFET QFET QFET QFET FQP19N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 19A, 100V, RDS(on) = 0.1 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 14 nC) planar stripe, DMOS technology. Low Crss ( typical 35 pF) This advanced technology has ... See More ⇒

 8.1. Size:1168K  fairchild semi
fqp19n20ctstu fqp19n20c fqpf19n20c fqpf19n20cydtu.pdf pdf_icon

FQP19N10

QFET FQP19N20C/FQPF19N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 19.0A, 200V, RDS(on) = 0.17 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 40.5 nC) planar stripe, DMOS technology. Low Crss ( typical 85 pF) This advanced technology has been especially tailo... See More ⇒

 8.2. Size:722K  fairchild semi
fqp19n20l.pdf pdf_icon

FQP19N10

May 2000 TM QFET QFET QFET QFET 200V LOGIC N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 21A, 200V, RDS(on) = 0.14 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 27 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has b... See More ⇒

Detailed specifications: FQP11N50CF , FQP12N60 , FQP13N06 , FQP16N15 , FQP17N08 , FQP17N08L , FQP18N20V2 , FQP18N50V2 , IRF9640 , FQP19N10L , FQP19N20CTSTU , FQP19N20L , FQP1N50 , FQP1N60 , FQP1P50 , FQP20N06TSTU , FQP22P10 .

History: HGB290N10SL

Keywords - FQP19N10 MOSFET specs

 FQP19N10 cross reference
 FQP19N10 equivalent finder
 FQP19N10 lookup
 FQP19N10 substitution
 FQP19N10 replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 
Back to Top

 


 
.