FQP34N20L - аналоги, параметры транзистора - Справочник транзисторов

FQP34N20L технические параметры

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June 2000 TM QFET QFET QFET QFET FQP34N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 31A, 200V, RDS(on) = 0.075 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 55 nC) planar stripe, DMOS technology. Low Crss ( typical 52 pF) This advanced technology has

6.1. Size:732K fairchild semi
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April 2000 TM QFET QFET QFET QFET 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 31A, 200V, RDS(on) = 0.075 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 60 nC) planar stripe, DMOS technology. Low Crss ( typical 55 pF) This advanced technology has been

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FQP34N20 www.VBsemi.tw N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 175 C Junction Temperature RoHS 0.060 at VGS = 10 V COMPLIANT 40 New Low Thermal Resistance Package 200 95 0.070 at VGS = 6 V 38.7 Compliant to RoHS Directive 2002/95/EC APPLICATIONS TO-220AB Industrial D G G D

Другие MOSFET... FQP27P06SW82127 , FQP2N30 , FQP2N50 , FQP2N60 , FQP2NA90 , FQP2P25 , FQP32N12V2 , FQP33N10L , 20N60 , FQP3N25 , FQP3N40 , FQP3N60 , FQP3N80 , FQP3N90 , FQP44N08 , FQP44N10F , FQP4N20 .