FQP34N20L Datasheet. Specs and Replacement

Type Designator: FQP34N20L  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 180 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 31 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 520 nS

Cossⓘ - Output Capacitance: 400 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm

Package: TO-220

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FQP34N20L datasheet

 ..1. Size:674K  fairchild semi
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FQP34N20L

June 2000 TM QFET QFET QFET QFET FQP34N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 31A, 200V, RDS(on) = 0.075 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 55 nC) planar stripe, DMOS technology. Low Crss ( typical 52 pF) This advanced technology has ... See More ⇒

 6.1. Size:732K  fairchild semi
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FQP34N20L

April 2000 TM QFET QFET QFET QFET 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 31A, 200V, RDS(on) = 0.075 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 60 nC) planar stripe, DMOS technology. Low Crss ( typical 55 pF) This advanced technology has been ... See More ⇒

 6.2. Size:1824K  onsemi
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FQP34N20L

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 6.3. Size:750K  cn vbsemi
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FQP34N20L

FQP34N20 www.VBsemi.tw N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 175 C Junction Temperature RoHS 0.060 at VGS = 10 V COMPLIANT 40 New Low Thermal Resistance Package 200 95 0.070 at VGS = 6 V 38.7 Compliant to RoHS Directive 2002/95/EC APPLICATIONS TO-220AB Industrial D G G D ... See More ⇒

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Detailed specifications: FQP27P06SW82127, FQP2N30, FQP2N50, FQP2N60, FQP2NA90, FQP2P25, FQP32N12V2, FQP33N10L, 20N60, FQP3N25, FQP3N40, FQP3N60, FQP3N80, FQP3N90, FQP44N08, FQP44N10F, FQP4N20

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